The impact of SiNx gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature- illumination stress

Ji Sim Jung; Kyoung Seok Son; Kwang Hee Lee; Joon Seok Park; Tae Sang Kim; Jang Yeon Kwon; Kwun Bum Chung; Jin Seong Park; Bonwon Koo; Sangyun Lee

doi:10.1063/1.3429588

The impact of SiN_x gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature- illumination stress

Ji Sim Jung, Kyoung Seok Son, Kwang Hee Lee, Joon Seok Park, Tae Sang Kim, Jang Yeon Kwon, Kwun Bum Chung, Jin Seong Park, Bonwon Koo, Sangyun Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

The threshold voltage instability (V_th) in indium-gallium-zinc oxide thin film transistor was investigated with disparate SiN_x gate insulators under bias-temperature-illumination stress. As SiN_x film stress became more tensile, the negative shift in V_th decreased significantly from -14.34 to -6.37 V. The compressive films exhibit a nitrogen-rich phase, higher hydrogen contents, and higher N-H bonds than tensile films. This suggests that the higher N-H related traps may play a dominant role in the degradation of the devices, which may provide and/or generate charge trapping sites in interfaces and/or SiN_x insulators. It is anticipated that the appropriate optimization of gate insulator properties will help to improve device reliability.

Original language	English
Article number	193506
Journal	Applied Physics Letters
Volume	96
Issue number	19
DOIs	https://doi.org/10.1063/1.3429588
Publication status	Published - 2010

Bibliographical note

Funding Information:
Dr. Jin-Seong Park acknowledges the research funding from the Samsung Advanced Institute of Technology and this work was supported by the collaborative R&D program with technology advanced country “Development of materials and stacked device structure for next generation solar cells, 2009-advanced-B-105” by the Ministry of Knowledge and Economy.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3429588

Cite this

@article{2f799cfaf3af4991aba0c1078f1b77bb,

title = "The impact of SiNx gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature- illumination stress",

abstract = "The threshold voltage instability (Vth) in indium-gallium-zinc oxide thin film transistor was investigated with disparate SiNx gate insulators under bias-temperature-illumination stress. As SiNx film stress became more tensile, the negative shift in Vth decreased significantly from -14.34 to -6.37 V. The compressive films exhibit a nitrogen-rich phase, higher hydrogen contents, and higher N-H bonds than tensile films. This suggests that the higher N-H related traps may play a dominant role in the degradation of the devices, which may provide and/or generate charge trapping sites in interfaces and/or SiNx insulators. It is anticipated that the appropriate optimization of gate insulator properties will help to improve device reliability.",

author = "Jung, {Ji Sim} and Son, {Kyoung Seok} and Lee, {Kwang Hee} and Park, {Joon Seok} and Kim, {Tae Sang} and Kwon, {Jang Yeon} and Chung, {Kwun Bum} and Park, {Jin Seong} and Bonwon Koo and Sangyun Lee",

note = "Funding Information: Dr. Jin-Seong Park acknowledges the research funding from the Samsung Advanced Institute of Technology and this work was supported by the collaborative R&D program with technology advanced country “Development of materials and stacked device structure for next generation solar cells, 2009-advanced-B-105” by the Ministry of Knowledge and Economy. ",

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AU - Jung, Ji Sim

AU - Son, Kyoung Seok

AU - Lee, Kwang Hee

AU - Park, Joon Seok

AU - Kim, Tae Sang

AU - Kwon, Jang Yeon

AU - Chung, Kwun Bum

AU - Park, Jin Seong

AU - Koo, Bonwon

AU - Lee, Sangyun

N1 - Funding Information: Dr. Jin-Seong Park acknowledges the research funding from the Samsung Advanced Institute of Technology and this work was supported by the collaborative R&D program with technology advanced country “Development of materials and stacked device structure for next generation solar cells, 2009-advanced-B-105” by the Ministry of Knowledge and Economy.

PY - 2010

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N2 - The threshold voltage instability (Vth) in indium-gallium-zinc oxide thin film transistor was investigated with disparate SiNx gate insulators under bias-temperature-illumination stress. As SiNx film stress became more tensile, the negative shift in Vth decreased significantly from -14.34 to -6.37 V. The compressive films exhibit a nitrogen-rich phase, higher hydrogen contents, and higher N-H bonds than tensile films. This suggests that the higher N-H related traps may play a dominant role in the degradation of the devices, which may provide and/or generate charge trapping sites in interfaces and/or SiNx insulators. It is anticipated that the appropriate optimization of gate insulator properties will help to improve device reliability.

AB - The threshold voltage instability (Vth) in indium-gallium-zinc oxide thin film transistor was investigated with disparate SiNx gate insulators under bias-temperature-illumination stress. As SiNx film stress became more tensile, the negative shift in Vth decreased significantly from -14.34 to -6.37 V. The compressive films exhibit a nitrogen-rich phase, higher hydrogen contents, and higher N-H bonds than tensile films. This suggests that the higher N-H related traps may play a dominant role in the degradation of the devices, which may provide and/or generate charge trapping sites in interfaces and/or SiNx insulators. It is anticipated that the appropriate optimization of gate insulator properties will help to improve device reliability.

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