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The impact of dislocation on bulk-Si FinFET technologies: Physical modeling of strain relaxation and enhancement by dislocation
Jeong Guk Min, Changwook Jeong, Uihui Kwon, Dae Sin Kim, Suhyun Kim, Ilryoung Kim, Joon Sung Yang
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
1
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(Scopus)