The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks

Yujin Seo; Tae In Lee; Chang Mo Yoon; Bo Eun Park; Wan Sik Hwang; Hyungjun Kim; Hyun Yong Yu; Byung Jin Cho

doi:10.1109/TED.2017.2710182

The Impact of an Ultrathin Y₂O₃ Layer on GeO₂ Passivation in Ge MOS Gate Stacks

Yujin Seo, Tae In Lee, Chang Mo Yoon, Bo Eun Park, Wan Sik Hwang, Hyungjun Kim, Hyun Yong Yu, Byung Jin Cho

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

This paper investigates the impact of an atomic layer-deposited Y₂O₃ dielectric on the passivation of a GeO₂ layer in GeO₂-based Ge gate stacks. The equivalent oxide thickness scalability and thermal stability of the ultrathin Y₂O₃ layer are evaluated at different Y₂O₃ thicknesses and annealing conditions in detail. Experimental results show that a Y₂O₃ layer thickness of 1.0 nm is required to serve as a GeO₂ passivation layer while retaining gate-stack performance at 400 °C postdeposition annealing. However, at a higher annealing temperature of 500 °C, the barrier property deteriorates and allows GeO desorption. The proposed gate-stack implies the applicability of a Y₂O₃ passivation method for further scaled GeO₂-based Ge gate stacks.

Original language	English
Article number	7970127
Pages (from-to)	3303-3307
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	8
DOIs	https://doi.org/10.1109/TED.2017.2710182
Publication status	Published - 2017 Aug

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2017.2710182

Cite this

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title = "The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks",

abstract = "This paper investigates the impact of an atomic layer-deposited Y2O3 dielectric on the passivation of a GeO2 layer in GeO2-based Ge gate stacks. The equivalent oxide thickness scalability and thermal stability of the ultrathin Y2O3 layer are evaluated at different Y2O3 thicknesses and annealing conditions in detail. Experimental results show that a Y2O3 layer thickness of 1.0 nm is required to serve as a GeO2 passivation layer while retaining gate-stack performance at 400 °C postdeposition annealing. However, at a higher annealing temperature of 500 °C, the barrier property deteriorates and allows GeO desorption. The proposed gate-stack implies the applicability of a Y2O3 passivation method for further scaled GeO2-based Ge gate stacks.",

author = "Yujin Seo and Lee, {Tae In} and Yoon, {Chang Mo} and Park, {Bo Eun} and Hwang, {Wan Sik} and Hyungjun Kim and Yu, {Hyun Yong} and Cho, {Byung Jin}",

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AU - Seo, Yujin

AU - Lee, Tae In

AU - Yoon, Chang Mo

AU - Park, Bo Eun

AU - Hwang, Wan Sik

AU - Kim, Hyungjun

AU - Yu, Hyun Yong

AU - Cho, Byung Jin

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