The formation of p-type ZnO films by using a diffusion process

M. C. Jeong; D. K. Hwang; J. M. Myoung; Y. D. Ko; M. S. Kim; I. Yun

doi:10.4028/www.scientific.net/ddf.218-220.17

The formation of p-type ZnO films by using a diffusion process

M. C. Jeong, D. K. Hwang, J. M. Myoung, Y. D. Ko, M. S. Kim, I. Yun

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

ZnO films were deposited on InP and GaAs substrates by using radio frequency (rf) magnetron sputtering and the diffusion process was performed to control the electrical properties of ZnO films. By using ambient-controlled ampoule, phosphor from Zn₃P₂ and arsenic diffused to the ZnO films in the ampoule and acted as acceptors in the films. Hall measurement exhibited the doped ZnO films were p-type characteristic. Moreover, ZnO thin film homojuctions were formed to investigate the films' electrical properties. Based on these results, it is confirmed that ZnO film is the potential candidate for optical devices.

Original language	English
Pages (from-to)	17-22
Number of pages	6
Journal	Defect and Diffusion Forum
Volume	218-220
DOIs	https://doi.org/10.4028/www.scientific.net/ddf.218-220.17
Publication status	Published - 2003

All Science Journal Classification (ASJC) codes

Radiation
Materials Science(all)
Condensed Matter Physics

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title = "The formation of p-type ZnO films by using a diffusion process",

abstract = "ZnO films were deposited on InP and GaAs substrates by using radio frequency (rf) magnetron sputtering and the diffusion process was performed to control the electrical properties of ZnO films. By using ambient-controlled ampoule, phosphor from Zn3P2 and arsenic diffused to the ZnO films in the ampoule and acted as acceptors in the films. Hall measurement exhibited the doped ZnO films were p-type characteristic. Moreover, ZnO thin film homojuctions were formed to investigate the films' electrical properties. Based on these results, it is confirmed that ZnO film is the potential candidate for optical devices.",

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T1 - The formation of p-type ZnO films by using a diffusion process

AU - Jeong, M. C.

AU - Hwang, D. K.

AU - Myoung, J. M.

AU - Ko, Y. D.

AU - Kim, M. S.

AU - Yun, I.

PY - 2003

Y1 - 2003

N2 - ZnO films were deposited on InP and GaAs substrates by using radio frequency (rf) magnetron sputtering and the diffusion process was performed to control the electrical properties of ZnO films. By using ambient-controlled ampoule, phosphor from Zn3P2 and arsenic diffused to the ZnO films in the ampoule and acted as acceptors in the films. Hall measurement exhibited the doped ZnO films were p-type characteristic. Moreover, ZnO thin film homojuctions were formed to investigate the films' electrical properties. Based on these results, it is confirmed that ZnO film is the potential candidate for optical devices.

AB - ZnO films were deposited on InP and GaAs substrates by using radio frequency (rf) magnetron sputtering and the diffusion process was performed to control the electrical properties of ZnO films. By using ambient-controlled ampoule, phosphor from Zn3P2 and arsenic diffused to the ZnO films in the ampoule and acted as acceptors in the films. Hall measurement exhibited the doped ZnO films were p-type characteristic. Moreover, ZnO thin film homojuctions were formed to investigate the films' electrical properties. Based on these results, it is confirmed that ZnO film is the potential candidate for optical devices.

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VL - 218-220

SP - 17

EP - 22

JO - Defect and Diffusion Forum

JF - Defect and Diffusion Forum

ER -

The formation of p-type ZnO films by using a diffusion process

Abstract

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