The formation of a dielectric SiNxCy sealing layer using an atomic layer deposition technique

Doyoung Kim; Soo Hyun Kim; Hyungjun Kim

doi:10.1016/j.mssp.2014.01.016

The formation of a dielectric SiN_xC_y sealing layer using an atomic layer deposition technique

Doyoung Kim, Soo Hyun Kim, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We investigated the growth of a SiN_xC_y dielectric sealing layer on a porous low dielectric constant (low-k) substrate using plasma-enhanced atomic layer deposition (PE-ALD). A porous low-k substrate was repeatedly exposed to bis(dimethylamino)dimethylsilane (BDMADMS) and a hydrogen plasma. A SiN_xC_y sealing layer grown by PE-ALD was formed without any penetration of the pores within the porous low dielectric substrate. Our technique provides for the deposition of a dielectric sealing layer that prevents pore penetration of a low-k material.

Original language	English
Pages (from-to)	139-142
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	29
DOIs	https://doi.org/10.1016/j.mssp.2014.01.016
Publication status	Published - 2015 Jan

Bibliographical note

Funding Information:
This work was supported by the Industrial Strategic technology development program ( 10041926 , Development of high density plasma technologies for thin film deposition of nanoscale semiconductor and flexible display processing) funded by the Ministry of Knowledge Economy (MKE, Korea) and by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( NRF-2010–0024066 ).

Publisher Copyright:
© 2014 Elsevier Ltd. All rights reserved.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mssp.2014.01.016

Cite this

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title = "The formation of a dielectric SiNxCy sealing layer using an atomic layer deposition technique",

abstract = "We investigated the growth of a SiNxCy dielectric sealing layer on a porous low dielectric constant (low-k) substrate using plasma-enhanced atomic layer deposition (PE-ALD). A porous low-k substrate was repeatedly exposed to bis(dimethylamino)dimethylsilane (BDMADMS) and a hydrogen plasma. A SiNxCy sealing layer grown by PE-ALD was formed without any penetration of the pores within the porous low dielectric substrate. Our technique provides for the deposition of a dielectric sealing layer that prevents pore penetration of a low-k material.",

author = "Doyoung Kim and Kim, {Soo Hyun} and Hyungjun Kim",

note = "Funding Information: This work was supported by the Industrial Strategic technology development program ( 10041926 , Development of high density plasma technologies for thin film deposition of nanoscale semiconductor and flexible display processing) funded by the Ministry of Knowledge Economy (MKE, Korea) and by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( NRF-2010–0024066 ). Publisher Copyright: {\textcopyright} 2014 Elsevier Ltd. All rights reserved.",

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doi = "10.1016/j.mssp.2014.01.016",

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AU - Kim, Soo Hyun

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PY - 2015/1

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AB - We investigated the growth of a SiNxCy dielectric sealing layer on a porous low dielectric constant (low-k) substrate using plasma-enhanced atomic layer deposition (PE-ALD). A porous low-k substrate was repeatedly exposed to bis(dimethylamino)dimethylsilane (BDMADMS) and a hydrogen plasma. A SiNxCy sealing layer grown by PE-ALD was formed without any penetration of the pores within the porous low dielectric substrate. Our technique provides for the deposition of a dielectric sealing layer that prevents pore penetration of a low-k material.

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