The formation of a dielectric SiNxCy sealing layer using an atomic layer deposition technique

Doyoung Kim, Soo Hyun Kim, Hyungjun Kim

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We investigated the growth of a SiNxCy dielectric sealing layer on a porous low dielectric constant (low-k) substrate using plasma-enhanced atomic layer deposition (PE-ALD). A porous low-k substrate was repeatedly exposed to bis(dimethylamino)dimethylsilane (BDMADMS) and a hydrogen plasma. A SiNxCy sealing layer grown by PE-ALD was formed without any penetration of the pores within the porous low dielectric substrate. Our technique provides for the deposition of a dielectric sealing layer that prevents pore penetration of a low-k material.

Original languageEnglish
Pages (from-to)139-142
Number of pages4
JournalMaterials Science in Semiconductor Processing
Publication statusPublished - 2015 Jan

Bibliographical note

Funding Information:
This work was supported by the Industrial Strategic technology development program ( 10041926 , Development of high density plasma technologies for thin film deposition of nanoscale semiconductor and flexible display processing) funded by the Ministry of Knowledge Economy (MKE, Korea) and by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( NRF-2010–0024066 ).

Publisher Copyright:
© 2014 Elsevier Ltd. All rights reserved.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'The formation of a dielectric SiNxCy sealing layer using an atomic layer deposition technique'. Together they form a unique fingerprint.

Cite this