The field emission properties of silicon carbide whiskers grown by CVD

Dong Chan Lim, Hyung Suk Ahn, Doo Jin Choi, Chae Hyun Wang, Hajime Tomokage

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Silicon carbide whiskers and films were grown by chemical vapor deposition without a metallic catalyst in the temperature range between 1000 °C and 1150 °C, and at a constant pressure and input gas ratio[H2/MTS(Methyltrichlorosilane)] of 5 Torr and 30, respectively. The mean diameter of whiskers increased from 96 nm to 1.24 μm as the deposition temperature increased up to 1100 °C. Further increasing of the growth temperature made the growth mechanism transfer from whisker growth to film growth and the surface morphology adopted a pebble-like structure. Silicon carbide whiskers and films showed cold field emission properties and the whiskers, which were obtained, at a temperature of 1050 °C showed relatively good field emission properties.

Original languageEnglish
Pages (from-to)37-42
Number of pages6
JournalSurface and Coatings Technology
Issue number1
Publication statusPublished - 2003 May 1

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the Ceramic Processing Research Center at Hanyang University.

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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