The field emission properties of silicon carbide whiskers grown by CVD

Dong Chan Lim; Hyung Suk Ahn; Doo Jin Choi; Chae Hyun Wang; Hajime Tomokage

doi:10.1016/S0257-8972(02)00924-6

The field emission properties of silicon carbide whiskers grown by CVD

Dong Chan Lim, Hyung Suk Ahn, Doo Jin Choi, Chae Hyun Wang, Hajime Tomokage

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Silicon carbide whiskers and films were grown by chemical vapor deposition without a metallic catalyst in the temperature range between 1000 °C and 1150 °C, and at a constant pressure and input gas ratio[H₂/MTS(Methyltrichlorosilane)] of 5 Torr and 30, respectively. The mean diameter of whiskers increased from 96 nm to 1.24 μm as the deposition temperature increased up to 1100 °C. Further increasing of the growth temperature made the growth mechanism transfer from whisker growth to film growth and the surface morphology adopted a pebble-like structure. Silicon carbide whiskers and films showed cold field emission properties and the whiskers, which were obtained, at a temperature of 1050 °C showed relatively good field emission properties.

Original language	English
Pages (from-to)	37-42
Number of pages	6
Journal	Surface and Coatings Technology
Volume	168
Issue number	1
DOIs	https://doi.org/10.1016/S0257-8972(02)00924-6
Publication status	Published - 2003 May 1

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the Ceramic Processing Research Center at Hanyang University.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0257-8972(02)00924-6

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title = "The field emission properties of silicon carbide whiskers grown by CVD",

abstract = "Silicon carbide whiskers and films were grown by chemical vapor deposition without a metallic catalyst in the temperature range between 1000 °C and 1150 °C, and at a constant pressure and input gas ratio[H2/MTS(Methyltrichlorosilane)] of 5 Torr and 30, respectively. The mean diameter of whiskers increased from 96 nm to 1.24 μm as the deposition temperature increased up to 1100 °C. Further increasing of the growth temperature made the growth mechanism transfer from whisker growth to film growth and the surface morphology adopted a pebble-like structure. Silicon carbide whiskers and films showed cold field emission properties and the whiskers, which were obtained, at a temperature of 1050 °C showed relatively good field emission properties.",

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AU - Lim, Dong Chan

AU - Ahn, Hyung Suk

AU - Choi, Doo Jin

AU - Wang, Chae Hyun

AU - Tomokage, Hajime

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the Ceramic Processing Research Center at Hanyang University.

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N2 - Silicon carbide whiskers and films were grown by chemical vapor deposition without a metallic catalyst in the temperature range between 1000 °C and 1150 °C, and at a constant pressure and input gas ratio[H2/MTS(Methyltrichlorosilane)] of 5 Torr and 30, respectively. The mean diameter of whiskers increased from 96 nm to 1.24 μm as the deposition temperature increased up to 1100 °C. Further increasing of the growth temperature made the growth mechanism transfer from whisker growth to film growth and the surface morphology adopted a pebble-like structure. Silicon carbide whiskers and films showed cold field emission properties and the whiskers, which were obtained, at a temperature of 1050 °C showed relatively good field emission properties.

AB - Silicon carbide whiskers and films were grown by chemical vapor deposition without a metallic catalyst in the temperature range between 1000 °C and 1150 °C, and at a constant pressure and input gas ratio[H2/MTS(Methyltrichlorosilane)] of 5 Torr and 30, respectively. The mean diameter of whiskers increased from 96 nm to 1.24 μm as the deposition temperature increased up to 1100 °C. Further increasing of the growth temperature made the growth mechanism transfer from whisker growth to film growth and the surface morphology adopted a pebble-like structure. Silicon carbide whiskers and films showed cold field emission properties and the whiskers, which were obtained, at a temperature of 1050 °C showed relatively good field emission properties.

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The field emission properties of silicon carbide whiskers grown by CVD

Abstract

Bibliographical note

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