@inproceedings{28540442e46e4c6c88da9119775d5653,
title = "The electrical properties of low temperature polycrystalline si thin film transistor prepared by nickel-ALD process",
abstract = "We have fabricated low temperature polycrystalline Si thin film transistors (LTPS TFTs) for flat panel displays. In this work, metal induced crystallization (MIC) using atomic layer deposition (ALD) was employed to obtain poly-Si as an active layer in LTPS TFTs. The small amounts of nickel atoms by ALD were deposited on amorphous Si to minimize the metal contaminations. The poly-Si thin films have large and uniform grains with average size of 27 um by self-limited reaction process of ALD. The n-type LTPS TFT exhibits a high field effect mobility of about 76 cm2/Vs, a sub-threshold slope of 0.09 V, a threshold voltage of 4.79 V, and an on-off ratio of 4.9 x 106.",
author = "Lee, {Seung Min} and Lee, {Choong Hee} and Jeong, {Tae Hoon} and Kim, {Hyun Jae}",
year = "2008",
doi = "10.1149/1.2911519",
language = "English",
isbn = "9781566776264",
series = "ECS Transactions",
number = "1",
pages = "367--374",
booktitle = "ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4",
edition = "1",
note = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 ; Conference date: 18-05-2008 Through 22-05-2008",
}