The electrical and chemical properties of low pressure chemical vapor deposition (LP-CVD) Ga doped ZnO (ZnO:Ga) films were systematically investigated using Hall measurement and X-ray photoemission spectroscopy (XPS). Diethylzinc (DEZ) and O 2 gas were used as precursor and reactant gas, respectively, and trimethyl gallium (TMGa) was used as a Ga doping source. Initially, the electrical properties of undoped LP-CVD ZnO films depending on the partial pressure of DEZ and O 2 ratio were investigated using X-ray diffraction (XRD) by changing partial pressure of DEZ from 40 to 140 mTorr and that of O 2 from 40 to 80 mTorr. The resistivity was reduced by Ga doping from 7.24 × 10 -3 Ω cm for undoped ZnO to 2.05 × 10 -3 Ω cm for Ga doped ZnO at the TMG pressure of 8 mTorr. The change of electric properties of Ga doped ZnO with varying the amount of Ga dopants was systematically discussed based on the structural crystallinity and chemical bonding configuration, analyzed by XRD and XPS, respectively.
Bibliographical noteFunding Information:
This work was supported by the Industrial Strategic Technology Development Program (10041041, Development of non-vacuum and non-lithography based 5 μm width Cu interconnect technology for TFT backplane) funded by the Ministry of Knowledge Economy (MKE, Korea) .
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Surfaces and Interfaces