The electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGeX gates stack

S. K. Kang; J. J. Kim; D. H. Ko; T. H. Ahn; I. S. Yeo; T. W. Lee; Y. H. Lee

doi:10.1557/proc-670-k5.9

The electrical characteristics of the MOSCAP structures with W/WN_x/poly Si_1-xGe_X gates stack

S. K. Kang, J. J. Kim, D. H. Ko, T. H. Ahn, I. S. Yeo, T. W. Lee, Y. H. Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We investigated the electrical characteristics of the MOSCAP structures with W/WN_x/poly Si_1-xGe_x gates stack using C-V and I-V. The low frequency C-V measurements demonstrated that the flat band voltage of the W/WN_x/poly Si_0.4Ge_0.6 stack was lower than that of W/WN_x/poly Si_0.2Ge_0.8 stack by 0.3V, and showed less gate-poly-depletion-effect than that of W/WN_x/poly- Si_0.2Ge_0.8 gates due to the increase of dopant activation rate with the increase of Ge content in the poly Si_1-xGe_x films. As Ge content in poly Si_1-xGe_x increased, the leakage current level increased a little due to the increase of direct tunneling and Q_BD became higher due to the lower boron penetration.

Original language	English
Pages (from-to)	K591-K596
Journal	Materials Research Society Symposium - Proceedings
Volume	670
DOIs	https://doi.org/10.1557/proc-670-k5.9
Publication status	Published - 2001
Event	Gate Stack and Silicide Issues in Silicon Processing II - San Francisco, CA, United States Duration: 2001 Apr 17 → 2001 Apr 19

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-670-k5.9

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title = "The electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGeX gates stack",

abstract = "We investigated the electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGex gates stack using C-V and I-V. The low frequency C-V measurements demonstrated that the flat band voltage of the W/WNx/poly Si0.4Ge0.6 stack was lower than that of W/WNx/poly Si0.2Ge0.8 stack by 0.3V, and showed less gate-poly-depletion-effect than that of W/WNx/poly- Si0.2Ge0.8 gates due to the increase of dopant activation rate with the increase of Ge content in the poly Si1-xGex films. As Ge content in poly Si1-xGex increased, the leakage current level increased a little due to the increase of direct tunneling and QBD became higher due to the lower boron penetration.",

author = "Kang, {S. K.} and Kim, {J. J.} and Ko, {D. H.} and Ahn, {T. H.} and Yeo, {I. S.} and Lee, {T. W.} and Lee, {Y. H.}",

year = "2001",

doi = "10.1557/proc-670-k5.9",

language = "English",

volume = "670",

pages = "K591--K596",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Gate Stack and Silicide Issues in Silicon Processing II ; Conference date: 17-04-2001 Through 19-04-2001",

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T1 - The electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGeX gates stack

AU - Kang, S. K.

AU - Kim, J. J.

AU - Ko, D. H.

AU - Ahn, T. H.

AU - Yeo, I. S.

AU - Lee, T. W.

AU - Lee, Y. H.

PY - 2001

Y1 - 2001

N2 - We investigated the electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGex gates stack using C-V and I-V. The low frequency C-V measurements demonstrated that the flat band voltage of the W/WNx/poly Si0.4Ge0.6 stack was lower than that of W/WNx/poly Si0.2Ge0.8 stack by 0.3V, and showed less gate-poly-depletion-effect than that of W/WNx/poly- Si0.2Ge0.8 gates due to the increase of dopant activation rate with the increase of Ge content in the poly Si1-xGex films. As Ge content in poly Si1-xGex increased, the leakage current level increased a little due to the increase of direct tunneling and QBD became higher due to the lower boron penetration.

AB - We investigated the electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGex gates stack using C-V and I-V. The low frequency C-V measurements demonstrated that the flat band voltage of the W/WNx/poly Si0.4Ge0.6 stack was lower than that of W/WNx/poly Si0.2Ge0.8 stack by 0.3V, and showed less gate-poly-depletion-effect than that of W/WNx/poly- Si0.2Ge0.8 gates due to the increase of dopant activation rate with the increase of Ge content in the poly Si1-xGex films. As Ge content in poly Si1-xGex increased, the leakage current level increased a little due to the increase of direct tunneling and QBD became higher due to the lower boron penetration.

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M3 - Conference article

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VL - 670

SP - K591-K596

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Gate Stack and Silicide Issues in Silicon Processing II

Y2 - 17 April 2001 through 19 April 2001

ER -

The electrical characteristics of the MOSCAP structures with W/WN_x/poly Si_1-xGe_X gates stack

Abstract

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