@inproceedings{434e9e28f5a64edfbf56927c4c112328,
title = "The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor",
abstract = "We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.",
keywords = "Atomic Layer Deposition (ALD), Plasma-Enhanced ALD (PE-ALD), TFT, UV treatment, ZnO",
author = "Kim, {Jae Min} and Lim, {S. J.} and Doyoung Kim and Hyungjun Kim",
year = "2011",
doi = "10.1063/1.3666664",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "895--896",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}