The effect of Sr concentration on resistive switching properties of La 1-xSrxMnO3 films

Sun Gyu Choi, Hong Sub Lee, Hyejung Choi, Sung Woong Chung, Hyung Ho Park

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


La1 - xSrxMnO3 (LSMO, x = 0.1, 0.3, and 0.5) thin films were prepared on Pt/Ti/SiO2/Si substrates using a radio frequency magnetron sputtering technique at a substrate temperature of 450 C. The effects of Sr contents on the physical, chemical, and electrical properties of films were systematically investigated. X-ray diffraction results showed that the growth orientation and crystallinity of films were affected by Sr content. The Mn valence transition was analyzed using X-ray photoelectron spectroscopy. The conversion of Mn3 + valence to Mn4 + with increasing Sr2 + concentration generated more Mn 3 +-O2 --Mn4 + bonds, and caused initial resistance change of LSMO films. The largest resistive switching of the La 0.7Sr0.3MnO3 film having a (110) plane preferred orientation is discussed.

Original languageEnglish
Pages (from-to)352-355
Number of pages4
JournalThin Solid Films
Publication statusPublished - 2013 Feb 1

Bibliographical note

Funding Information:
This work was supported by SK Hynix Inc. of Korea and by the second stage of the Brain Korea 21 project in 2011.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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