The effect of photoresist contrast on the exposure profiles obtained with evanescent fields of nanoapertures

Eungman Lee; Jae Won Hahn

doi:10.1063/1.2907971

The effect of photoresist contrast on the exposure profiles obtained with evanescent fields of nanoapertures

Eungman Lee, Jae Won Hahn

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We propose a simple theoretical model to predict the exposure profiles of a photoresist obtained with evanescent fields of nanoapertures. Assuming the electric field intensity to be a Gaussian distribution function with an exponential decay, the top critical dimension and the depth of the photoresist profile are described with analytic formulas. The profiles are analyzed as a function of the photoresist contrast and the electric field intensity decay length.

Original language	English
Article number	083550
Journal	Journal of Applied Physics
Volume	103
Issue number	8
DOIs	https://doi.org/10.1063/1.2907971
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was supported by “Nano R&D Program” of Korea Science and Engineering Foundation (Project No. M10609000019-06M0900-01910) and “Development Program of Nano Process Equipments” of Korea Ministry of Commerce, Industry and Energy (Project No. 10030259-2007-01).

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1063/1.2907971

Cite this

@article{739614c2430e4fe19a77ba3e3c3f27bc,

title = "The effect of photoresist contrast on the exposure profiles obtained with evanescent fields of nanoapertures",

abstract = "We propose a simple theoretical model to predict the exposure profiles of a photoresist obtained with evanescent fields of nanoapertures. Assuming the electric field intensity to be a Gaussian distribution function with an exponential decay, the top critical dimension and the depth of the photoresist profile are described with analytic formulas. The profiles are analyzed as a function of the photoresist contrast and the electric field intensity decay length.",

author = "Eungman Lee and Hahn, {Jae Won}",

note = "Funding Information: This work was supported by “Nano R&D Program” of Korea Science and Engineering Foundation (Project No. M10609000019-06M0900-01910) and “Development Program of Nano Process Equipments” of Korea Ministry of Commerce, Industry and Energy (Project No. 10030259-2007-01).",

year = "2008",

doi = "10.1063/1.2907971",

language = "English",

volume = "103",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - The effect of photoresist contrast on the exposure profiles obtained with evanescent fields of nanoapertures

AU - Lee, Eungman

AU - Hahn, Jae Won

N1 - Funding Information: This work was supported by “Nano R&D Program” of Korea Science and Engineering Foundation (Project No. M10609000019-06M0900-01910) and “Development Program of Nano Process Equipments” of Korea Ministry of Commerce, Industry and Energy (Project No. 10030259-2007-01).

PY - 2008

Y1 - 2008

N2 - We propose a simple theoretical model to predict the exposure profiles of a photoresist obtained with evanescent fields of nanoapertures. Assuming the electric field intensity to be a Gaussian distribution function with an exponential decay, the top critical dimension and the depth of the photoresist profile are described with analytic formulas. The profiles are analyzed as a function of the photoresist contrast and the electric field intensity decay length.

AB - We propose a simple theoretical model to predict the exposure profiles of a photoresist obtained with evanescent fields of nanoapertures. Assuming the electric field intensity to be a Gaussian distribution function with an exponential decay, the top critical dimension and the depth of the photoresist profile are described with analytic formulas. The profiles are analyzed as a function of the photoresist contrast and the electric field intensity decay length.

UR - http://www.scopus.com/inward/record.url?scp=43049121746&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43049121746&partnerID=8YFLogxK

U2 - 10.1063/1.2907971

DO - 10.1063/1.2907971

M3 - Article

AN - SCOPUS:43049121746

SN - 0021-8979

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 083550

ER -

The effect of photoresist contrast on the exposure profiles obtained with evanescent fields of nanoapertures

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this