Abstract
Lead zirconate titanate (PZT) thin films on Pt/Ti/SiO2/Si substrate were fabricated with photosensitizer or stabilizer and without additive. The behavior of NBAL in respect of physical and electrical properties was compared to that with conventional additive. For the film prepared with NBAL, the phase transformation temperature was lowered, the intensity of (111) peak was decreased, and the microstructure with fine grains was observed. The remnant polarization of the films prepared with NBAL or AcAc was slightly decreased comparing to the film prepared without additive. It was thought that photosensitizer could be evacuated effectively without any change of physical and electrical properties compared with that of conventional PZT films.
Original language | English |
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Pages (from-to) | 341-346 |
Number of pages | 6 |
Journal | Ferroelectrics |
Volume | 263 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2001 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics