The effect of NH3 on the interface of HfO2 and Al2 O3 films on GaAs(100) surfaces

Dong Chan Suh, Young Dae Cho, Yongshik Lee, Dae Hong Ko, Kwun Bum Chung, Mann Ho Cho

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


We investigate the effects of heat-treatment under NH3 ambient on the formation of Ga-O at the interface between GaAs and high- k dielectric materials deposited by atomic layer deposition. Compared with the heat-treatment under N2 ambient, the monochromatic X-ray photoelectron spectroscopy analysis reveal that the formation of Ga-O is greatly suppressed under NH 3 ambient for HfO2 on GaAs. However, the same experiments for Al2 O3 on GaAs show that the effect is negligible. We examine the different reaction mechanisms of the NH3 nitridation processes for two different high- k dielectric materials on GaAs.

Original languageEnglish
Pages (from-to)H376-H377
JournalElectrochemical and Solid-State Letters
Issue number10
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • General Chemical Engineering
  • General Materials Science
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


Dive into the research topics of 'The effect of NH3 on the interface of HfO2 and Al2 O3 films on GaAs(100) surfaces'. Together they form a unique fingerprint.

Cite this