The effect of low-k dielectrics on RFIC inductors

Jong Hyeok Jeon; Emigdio J. Inigo; Michael T. Reiha; Tae Young Choi; Yongshik Lee; Saeed Mohammadi; Linda P.B. Katehi

doi:10.1109/EUMC.2003.1262216

The effect of low-k dielectrics on RFIC inductors

Jong Hyeok Jeon, Emigdio J. Inigo, Michael T. Reiha, Tae Young Choi, Yongshik Lee, Saeed Mohammadi, Linda P.B. Katehi

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

This paper presents design, fabrication, and optimization of high quality factor (Q) inductors on low dielectric polymers implemented on a high resistivity silicon substrate. Both Benzocyclobutene (BCB) and SU-8TM dielectrics were used as low dielectric material. A maximum Q > 20 at 8GHz was measured for a 2.5nH inductor on SU8TM deposited on high resistivity Si.

Original language	English
Title of host publication	Conference Proceedings - 33rd European Microwave Conference, EuMC 2003
Publisher	IEEE Computer Society
Pages	53-56
Number of pages	4
ISBN (Print)	1580538347, 9781580538343
DOIs	https://doi.org/10.1109/EUMC.2003.1262216
Publication status	Published - 2003
Event	33rd European Microwave Conference, EuMC 2003 - Munich, Germany Duration: 2003 Oct 7 → 2003 Oct 7

Publication series

Name	Conference Proceedings - 33rd European Microwave Conference, EuMC 2003
Volume	1

Other

Other	33rd European Microwave Conference, EuMC 2003
Country/Territory	Germany
City	Munich
Period	03/10/7 → 03/10/7

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/EUMC.2003.1262216

Cite this

Jeon, J. H., Inigo, E. J., Reiha, M. T., Choi, T. Y., Lee, Y., Mohammadi, S., & Katehi, L. P. B. (2003). The effect of low-k dielectrics on RFIC inductors. In Conference Proceedings - 33rd European Microwave Conference, EuMC 2003 (pp. 53-56). Article 1262216 (Conference Proceedings - 33rd European Microwave Conference, EuMC 2003; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/EUMC.2003.1262216

@inproceedings{067d9b901a19493dbcbcb9865cb11c03,

title = "The effect of low-k dielectrics on RFIC inductors",

abstract = "This paper presents design, fabrication, and optimization of high quality factor (Q) inductors on low dielectric polymers implemented on a high resistivity silicon substrate. Both Benzocyclobutene (BCB) and SU-8TM dielectrics were used as low dielectric material. A maximum Q > 20 at 8GHz was measured for a 2.5nH inductor on SU8TM deposited on high resistivity Si.",

author = "Jeon, {Jong Hyeok} and Inigo, {Emigdio J.} and Reiha, {Michael T.} and Choi, {Tae Young} and Yongshik Lee and Saeed Mohammadi and Katehi, {Linda P.B.}",

year = "2003",

doi = "10.1109/EUMC.2003.1262216",

language = "English",

isbn = "1580538347",

series = "Conference Proceedings - 33rd European Microwave Conference, EuMC 2003",

publisher = "IEEE Computer Society",

pages = "53--56",

booktitle = "Conference Proceedings - 33rd European Microwave Conference, EuMC 2003",

address = "United States",

note = "33rd European Microwave Conference, EuMC 2003 ; Conference date: 07-10-2003 Through 07-10-2003",

}

Jeon, JH, Inigo, EJ, Reiha, MT, Choi, TY, Lee, Y, Mohammadi, S & Katehi, LPB 2003, The effect of low-k dielectrics on RFIC inductors. in Conference Proceedings - 33rd European Microwave Conference, EuMC 2003., 1262216, Conference Proceedings - 33rd European Microwave Conference, EuMC 2003, vol. 1, IEEE Computer Society, pp. 53-56, 33rd European Microwave Conference, EuMC 2003, Munich, Germany, 03/10/7. https://doi.org/10.1109/EUMC.2003.1262216

The effect of low-k dielectrics on RFIC inductors. / Jeon, Jong Hyeok; Inigo, Emigdio J.; Reiha, Michael T. et al.
Conference Proceedings - 33rd European Microwave Conference, EuMC 2003. IEEE Computer Society, 2003. p. 53-56 1262216 (Conference Proceedings - 33rd European Microwave Conference, EuMC 2003; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - The effect of low-k dielectrics on RFIC inductors

AU - Jeon, Jong Hyeok

AU - Inigo, Emigdio J.

AU - Reiha, Michael T.

AU - Choi, Tae Young

AU - Lee, Yongshik

AU - Mohammadi, Saeed

AU - Katehi, Linda P.B.

PY - 2003

Y1 - 2003

N2 - This paper presents design, fabrication, and optimization of high quality factor (Q) inductors on low dielectric polymers implemented on a high resistivity silicon substrate. Both Benzocyclobutene (BCB) and SU-8TM dielectrics were used as low dielectric material. A maximum Q > 20 at 8GHz was measured for a 2.5nH inductor on SU8TM deposited on high resistivity Si.

AB - This paper presents design, fabrication, and optimization of high quality factor (Q) inductors on low dielectric polymers implemented on a high resistivity silicon substrate. Both Benzocyclobutene (BCB) and SU-8TM dielectrics were used as low dielectric material. A maximum Q > 20 at 8GHz was measured for a 2.5nH inductor on SU8TM deposited on high resistivity Si.

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DO - 10.1109/EUMC.2003.1262216

M3 - Conference contribution

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SN - 1580538347

SN - 9781580538343

T3 - Conference Proceedings - 33rd European Microwave Conference, EuMC 2003

SP - 53

EP - 56

BT - Conference Proceedings - 33rd European Microwave Conference, EuMC 2003

PB - IEEE Computer Society

T2 - 33rd European Microwave Conference, EuMC 2003

Y2 - 7 October 2003 through 7 October 2003

ER -

The effect of low-k dielectrics on RFIC inductors

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