The effect of La                         2                         O                         3                         -incorporation in HfO                         2                          dielectrics on Ge substrate by atomic layer deposition

Il Kwon Oh; Min Kyu Kim; Jae Seung Lee; Chang Wan Lee; Clement Lansalot-Matras; Wontae Noh; Jusang Park; Atif Noori; David Thompson; Schubert Chu; W. J. Maeng; Hyungjun Kim

doi:10.1016/j.apsusc.2013.09.153

The effect of La ₂ O ₃ -incorporation in HfO ₂ dielectrics on Ge substrate by atomic layer deposition

Il Kwon Oh, Min Kyu Kim, Jae Seung Lee, Chang Wan Lee, Clement Lansalot-Matras, Wontae Noh, Jusang Park, Atif Noori, David Thompson, Schubert Chu, W. J. Maeng, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

We compared the electrical properties of HfO ₂ , HfO ₂ /La ₂ O ₃ , and La-doped HfO ₂ gate insulators deposited on Ge substrate using an atomic layer deposition (ALD) process. TDMAH [tetrakis(dimethylamino)hafnium] and La(iprCp) ₃ [tris(isopropyl-cyclopentadienyl) lanthanum] were employed as Hf and La precursors, respectively. Chemical compositions and binding structures were analyzed by X-ray photoelectron spectroscopy (XPS). Electrical properties were evaluated by capacitance-voltage (C-V) and current-voltage (I-V) measurements. We found that incorporation of La ₂ O ₃ near Ge can enhance the electrical properties of Ge MOS capacitors. The best electrical properties of 50 mV of hysteresis and mid ∼10 ¹² cm ^-2 eV ^-1 range interface states were found for the 400° C-annealed HfO ₂ /La ₂ O ₃ bilayer sample. These values are significantly better than those of ALD HfO ₂ gate insulators on Ge. We attribute this to the formation of LaGeO _x layers on the Ge surface, which reduces Ge O bonding.

Original language	English
Pages (from-to)	349-354
Number of pages	6
Journal	Applied Surface Science
Volume	287
DOIs	https://doi.org/10.1016/j.apsusc.2013.09.153
Publication status	Published - 2013

Bibliographical note

Funding Information:
This work was supported by the Industrial Strategic Technology Development Program (10041926, Development of high density plasma technologies for thin film deposition of nanoscale semiconductor and flexible display processing) funded by the Ministry of Knowledge Economy (MKE, Korea) .

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2013.09.153

Cite this

Oh, I. K., Kim, M. K., Lee, J. S., Lee, C. W., Lansalot-Matras, C., Noh, W., Park, J., Noori, A., Thompson, D., Chu, S., Maeng, W. J., & Kim, H. (2013). The effect of La ₂ O ₃ -incorporation in HfO ₂ dielectrics on Ge substrate by atomic layer deposition Applied Surface Science, 287, 349-354. https://doi.org/10.1016/j.apsusc.2013.09.153

Oh, Il Kwon ; Kim, Min Kyu ; Lee, Jae Seung et al. / The effect of La ₂ O ₃ -incorporation in HfO ₂ dielectrics on Ge substrate by atomic layer deposition In: Applied Surface Science. 2013 ; Vol. 287. pp. 349-354.

@article{a4ba9a43a2864385a39c17b6c8fdb907,

title = " The effect of La 2 O 3 -incorporation in HfO 2 dielectrics on Ge substrate by atomic layer deposition ",

abstract = " We compared the electrical properties of HfO 2 , HfO 2 /La 2 O 3 , and La-doped HfO 2 gate insulators deposited on Ge substrate using an atomic layer deposition (ALD) process. TDMAH [tetrakis(dimethylamino)hafnium] and La(iprCp) 3 [tris(isopropyl-cyclopentadienyl) lanthanum] were employed as Hf and La precursors, respectively. Chemical compositions and binding structures were analyzed by X-ray photoelectron spectroscopy (XPS). Electrical properties were evaluated by capacitance-voltage (C-V) and current-voltage (I-V) measurements. We found that incorporation of La 2 O 3 near Ge can enhance the electrical properties of Ge MOS capacitors. The best electrical properties of 50 mV of hysteresis and mid ∼10 12 cm -2 eV -1 range interface states were found for the 400° C-annealed HfO 2 /La 2 O 3 bilayer sample. These values are significantly better than those of ALD HfO 2 gate insulators on Ge. We attribute this to the formation of LaGeO x layers on the Ge surface, which reduces Ge O bonding.",

author = "Oh, {Il Kwon} and Kim, {Min Kyu} and Lee, {Jae Seung} and Lee, {Chang Wan} and Clement Lansalot-Matras and Wontae Noh and Jusang Park and Atif Noori and David Thompson and Schubert Chu and Maeng, {W. J.} and Hyungjun Kim",

note = "Funding Information: This work was supported by the Industrial Strategic Technology Development Program (10041926, Development of high density plasma technologies for thin film deposition of nanoscale semiconductor and flexible display processing) funded by the Ministry of Knowledge Economy (MKE, Korea) .",

year = "2013",

doi = "10.1016/j.apsusc.2013.09.153",

language = "English",

volume = "287",

pages = "349--354",

journal = "Applied Surface Science",

issn = "0169-4332",

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Oh, IK, Kim, MK, Lee, JS, Lee, CW, Lansalot-Matras, C, Noh, W, Park, J, Noori, A, Thompson, D, Chu, S, Maeng, WJ & Kim, H 2013, ' The effect of La ₂ O ₃ -incorporation in HfO ₂ dielectrics on Ge substrate by atomic layer deposition ', Applied Surface Science, vol. 287, pp. 349-354. https://doi.org/10.1016/j.apsusc.2013.09.153

The effect of La ₂ O ₃ -incorporation in HfO ₂ dielectrics on Ge substrate by atomic layer deposition . / Oh, Il Kwon; Kim, Min Kyu; Lee, Jae Seung et al.
In: Applied Surface Science, Vol. 287, 2013, p. 349-354.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The effect of La 2 O 3 -incorporation in HfO 2 dielectrics on Ge substrate by atomic layer deposition

AU - Oh, Il Kwon

AU - Kim, Min Kyu

AU - Lee, Jae Seung

AU - Lee, Chang Wan

AU - Lansalot-Matras, Clement

AU - Noh, Wontae

AU - Park, Jusang

AU - Noori, Atif

AU - Thompson, David

AU - Chu, Schubert

AU - Maeng, W. J.

AU - Kim, Hyungjun

N1 - Funding Information: This work was supported by the Industrial Strategic Technology Development Program (10041926, Development of high density plasma technologies for thin film deposition of nanoscale semiconductor and flexible display processing) funded by the Ministry of Knowledge Economy (MKE, Korea) .

PY - 2013

Y1 - 2013

N2 - We compared the electrical properties of HfO 2 , HfO 2 /La 2 O 3 , and La-doped HfO 2 gate insulators deposited on Ge substrate using an atomic layer deposition (ALD) process. TDMAH [tetrakis(dimethylamino)hafnium] and La(iprCp) 3 [tris(isopropyl-cyclopentadienyl) lanthanum] were employed as Hf and La precursors, respectively. Chemical compositions and binding structures were analyzed by X-ray photoelectron spectroscopy (XPS). Electrical properties were evaluated by capacitance-voltage (C-V) and current-voltage (I-V) measurements. We found that incorporation of La 2 O 3 near Ge can enhance the electrical properties of Ge MOS capacitors. The best electrical properties of 50 mV of hysteresis and mid ∼10 12 cm -2 eV -1 range interface states were found for the 400° C-annealed HfO 2 /La 2 O 3 bilayer sample. These values are significantly better than those of ALD HfO 2 gate insulators on Ge. We attribute this to the formation of LaGeO x layers on the Ge surface, which reduces Ge O bonding.

AB - We compared the electrical properties of HfO 2 , HfO 2 /La 2 O 3 , and La-doped HfO 2 gate insulators deposited on Ge substrate using an atomic layer deposition (ALD) process. TDMAH [tetrakis(dimethylamino)hafnium] and La(iprCp) 3 [tris(isopropyl-cyclopentadienyl) lanthanum] were employed as Hf and La precursors, respectively. Chemical compositions and binding structures were analyzed by X-ray photoelectron spectroscopy (XPS). Electrical properties were evaluated by capacitance-voltage (C-V) and current-voltage (I-V) measurements. We found that incorporation of La 2 O 3 near Ge can enhance the electrical properties of Ge MOS capacitors. The best electrical properties of 50 mV of hysteresis and mid ∼10 12 cm -2 eV -1 range interface states were found for the 400° C-annealed HfO 2 /La 2 O 3 bilayer sample. These values are significantly better than those of ALD HfO 2 gate insulators on Ge. We attribute this to the formation of LaGeO x layers on the Ge surface, which reduces Ge O bonding.

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U2 - 10.1016/j.apsusc.2013.09.153

DO - 10.1016/j.apsusc.2013.09.153

M3 - Article

AN - SCOPUS:84897077964

SN - 0169-4332

VL - 287

SP - 349

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JO - Applied Surface Science

JF - Applied Surface Science

ER -

Oh IK, Kim MK, Lee JS, Lee CW, Lansalot-Matras C, Noh W et al. The effect of La ₂ O ₃ -incorporation in HfO ₂ dielectrics on Ge substrate by atomic layer deposition Applied Surface Science. 2013;287:349-354. doi: 10.1016/j.apsusc.2013.09.153