The effect of interfacial state on electrical properties of PZT-electrode system for applying to nonvolatile memory devices

Il Sup Jin; Hyung Ho Park; Tae Song Kim

doi:10.1016/S0257-8972(97)00619-1

The effect of interfacial state on electrical properties of PZT-electrode system for applying to nonvolatile memory devices

Il Sup Jin, Hyung Ho Park, Tae Song Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The ferroelectric property of Pb(Zr_{cursive chi}Ti_1-x)O₃ (PZT) films have been reported to be greatly dependent on the interfacial state between PZT and electrode. However, the interfacial state of this system is not studied well and much is not known. In this study, we investigated the effect of phase, compositional and interfacial states of PZT-Pt bi-layered thin film system on its electrical properties using X-ray diffractometer, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Rutherford backscattering spectrometry. The improvement of fatigue property after the post-anneal could be explained based on the space charge layer model. During the post-anneal, the decomposition of α-PbO₂ phase was observed. This compensates the loss of Pb and O in PZT near the interface which can cause space charge accumulation and fatigue. And also the reduction of Pt oxide was observed which induces the ideal interface state.

Original language	English
Pages (from-to)	229-233
Number of pages	5
Journal	Surface and Coatings Technology
Volume	100-101
Issue number	1-3
DOIs	https://doi.org/10.1016/S0257-8972(97)00619-1
Publication status	Published - 1998 Mar

Bibliographical note

Funding Information:
This study was supported by the Ministry of Education of Korea through the Research Fund for Advanced Materials in 1996-1997.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0257-8972(97)00619-1

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title = "The effect of interfacial state on electrical properties of PZT-electrode system for applying to nonvolatile memory devices",

abstract = "The ferroelectric property of Pb(Zrcursive chiTi1-x)O3 (PZT) films have been reported to be greatly dependent on the interfacial state between PZT and electrode. However, the interfacial state of this system is not studied well and much is not known. In this study, we investigated the effect of phase, compositional and interfacial states of PZT-Pt bi-layered thin film system on its electrical properties using X-ray diffractometer, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Rutherford backscattering spectrometry. The improvement of fatigue property after the post-anneal could be explained based on the space charge layer model. During the post-anneal, the decomposition of α-PbO2 phase was observed. This compensates the loss of Pb and O in PZT near the interface which can cause space charge accumulation and fatigue. And also the reduction of Pt oxide was observed which induces the ideal interface state.",

author = "Jin, {Il Sup} and Park, {Hyung Ho} and Kim, {Tae Song}",

note = "Funding Information: This study was supported by the Ministry of Education of Korea through the Research Fund for Advanced Materials in 1996-1997.",

year = "1998",

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doi = "10.1016/S0257-8972(97)00619-1",

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AU - Jin, Il Sup

AU - Park, Hyung Ho

AU - Kim, Tae Song

N1 - Funding Information: This study was supported by the Ministry of Education of Korea through the Research Fund for Advanced Materials in 1996-1997.

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N2 - The ferroelectric property of Pb(Zrcursive chiTi1-x)O3 (PZT) films have been reported to be greatly dependent on the interfacial state between PZT and electrode. However, the interfacial state of this system is not studied well and much is not known. In this study, we investigated the effect of phase, compositional and interfacial states of PZT-Pt bi-layered thin film system on its electrical properties using X-ray diffractometer, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Rutherford backscattering spectrometry. The improvement of fatigue property after the post-anneal could be explained based on the space charge layer model. During the post-anneal, the decomposition of α-PbO2 phase was observed. This compensates the loss of Pb and O in PZT near the interface which can cause space charge accumulation and fatigue. And also the reduction of Pt oxide was observed which induces the ideal interface state.

AB - The ferroelectric property of Pb(Zrcursive chiTi1-x)O3 (PZT) films have been reported to be greatly dependent on the interfacial state between PZT and electrode. However, the interfacial state of this system is not studied well and much is not known. In this study, we investigated the effect of phase, compositional and interfacial states of PZT-Pt bi-layered thin film system on its electrical properties using X-ray diffractometer, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Rutherford backscattering spectrometry. The improvement of fatigue property after the post-anneal could be explained based on the space charge layer model. During the post-anneal, the decomposition of α-PbO2 phase was observed. This compensates the loss of Pb and O in PZT near the interface which can cause space charge accumulation and fatigue. And also the reduction of Pt oxide was observed which induces the ideal interface state.

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The effect of interfacial state on electrical properties of PZT-electrode system for applying to nonvolatile memory devices

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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