The effect of input gas ratio on the growth behavior of chemical vapor deposited SiC films

Jung Hwan Oh, Byung Jun Oh, Doo Jin Choi, Geung Ho Kim, Hue Sup Song

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26 Citations (Scopus)


In an effort to protect a RBSC (reaction-bonded silicon carbide) reaction tube, SiC films were chemically vapor deposited on RBSC substrates. SiC films were prepared to investigate the effect of the input gas ratios (dilute ratio, α = PH2/PMTS = QH2/QMTS) on the growth behavior using MTS (metyltrichlorosilane, CH3SiCl3) as a source in hydrogen atmosphere. The growth rate of SiC films increased and then decreased with the decrease of the input gas ratio at the deposition temperature of 1250°C. The microstructure and preferred orientation of SiC films were changed with the input gas ratio; Granular type grain structure exhibited the preferred orientation of (111) plane in the high input gas ratio region (α = 3-10). Faceted columnar grain structure showed the preferred orientation of (220) plane at the low input gas ratios (α = 1-2). The growth behavior of CVD SiC films with the input gas ratio was correlated with the change of the deposition mechanism from surface kinetics to mass transfer.

Original languageEnglish
Pages (from-to)1695-1700
Number of pages6
JournalJournal of Materials Science
Issue number7
Publication statusPublished - 2001 Apr 1

Bibliographical note

Funding Information:
The authors acknowledge the support of the Ministry of Commerce, Industry and Energy research fund for industry foundation technology development work.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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