The effect of input gas ratio on the growth behavior of chemical vapor deposited SiC films

Jung Hwan Oh; Byung Jun Oh; Doo Jin Choi; Geung Ho Kim; Hue Sup Song

doi:10.1023/A:1017508205412

The effect of input gas ratio on the growth behavior of chemical vapor deposited SiC films

Jung Hwan Oh, Byung Jun Oh, Doo Jin Choi, Geung Ho Kim, Hue Sup Song

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

In an effort to protect a RBSC (reaction-bonded silicon carbide) reaction tube, SiC films were chemically vapor deposited on RBSC substrates. SiC films were prepared to investigate the effect of the input gas ratios (dilute ratio, α = P_H2/P_MTS = Q_H2/Q_MTS) on the growth behavior using MTS (metyltrichlorosilane, CH₃SiCl₃) as a source in hydrogen atmosphere. The growth rate of SiC films increased and then decreased with the decrease of the input gas ratio at the deposition temperature of 1250°C. The microstructure and preferred orientation of SiC films were changed with the input gas ratio; Granular type grain structure exhibited the preferred orientation of (111) plane in the high input gas ratio region (α = 3-10). Faceted columnar grain structure showed the preferred orientation of (220) plane at the low input gas ratios (α = 1-2). The growth behavior of CVD SiC films with the input gas ratio was correlated with the change of the deposition mechanism from surface kinetics to mass transfer.

Original language	English
Pages (from-to)	1695-1700
Number of pages	6
Journal	Journal of Materials Science
Volume	36
Issue number	7
DOIs	https://doi.org/10.1023/A:1017508205412
Publication status	Published - 2001 Apr 1

Bibliographical note

Funding Information:
The authors acknowledge the support of the Ministry of Commerce, Industry and Energy research fund for industry foundation technology development work.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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title = "The effect of input gas ratio on the growth behavior of chemical vapor deposited SiC films",

abstract = "In an effort to protect a RBSC (reaction-bonded silicon carbide) reaction tube, SiC films were chemically vapor deposited on RBSC substrates. SiC films were prepared to investigate the effect of the input gas ratios (dilute ratio, α = PH2/PMTS = QH2/QMTS) on the growth behavior using MTS (metyltrichlorosilane, CH3SiCl3) as a source in hydrogen atmosphere. The growth rate of SiC films increased and then decreased with the decrease of the input gas ratio at the deposition temperature of 1250°C. The microstructure and preferred orientation of SiC films were changed with the input gas ratio; Granular type grain structure exhibited the preferred orientation of (111) plane in the high input gas ratio region (α = 3-10). Faceted columnar grain structure showed the preferred orientation of (220) plane at the low input gas ratios (α = 1-2). The growth behavior of CVD SiC films with the input gas ratio was correlated with the change of the deposition mechanism from surface kinetics to mass transfer.",

author = "Oh, {Jung Hwan} and Oh, {Byung Jun} and Choi, {Doo Jin} and Kim, {Geung Ho} and Song, {Hue Sup}",

note = "Funding Information: The authors acknowledge the support of the Ministry of Commerce, Industry and Energy research fund for industry foundation technology development work.",

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AU - Oh, Jung Hwan

AU - Oh, Byung Jun

AU - Choi, Doo Jin

AU - Kim, Geung Ho

AU - Song, Hue Sup

N1 - Funding Information: The authors acknowledge the support of the Ministry of Commerce, Industry and Energy research fund for industry foundation technology development work.

PY - 2001/4/1

Y1 - 2001/4/1

N2 - In an effort to protect a RBSC (reaction-bonded silicon carbide) reaction tube, SiC films were chemically vapor deposited on RBSC substrates. SiC films were prepared to investigate the effect of the input gas ratios (dilute ratio, α = PH2/PMTS = QH2/QMTS) on the growth behavior using MTS (metyltrichlorosilane, CH3SiCl3) as a source in hydrogen atmosphere. The growth rate of SiC films increased and then decreased with the decrease of the input gas ratio at the deposition temperature of 1250°C. The microstructure and preferred orientation of SiC films were changed with the input gas ratio; Granular type grain structure exhibited the preferred orientation of (111) plane in the high input gas ratio region (α = 3-10). Faceted columnar grain structure showed the preferred orientation of (220) plane at the low input gas ratios (α = 1-2). The growth behavior of CVD SiC films with the input gas ratio was correlated with the change of the deposition mechanism from surface kinetics to mass transfer.

AB - In an effort to protect a RBSC (reaction-bonded silicon carbide) reaction tube, SiC films were chemically vapor deposited on RBSC substrates. SiC films were prepared to investigate the effect of the input gas ratios (dilute ratio, α = PH2/PMTS = QH2/QMTS) on the growth behavior using MTS (metyltrichlorosilane, CH3SiCl3) as a source in hydrogen atmosphere. The growth rate of SiC films increased and then decreased with the decrease of the input gas ratio at the deposition temperature of 1250°C. The microstructure and preferred orientation of SiC films were changed with the input gas ratio; Granular type grain structure exhibited the preferred orientation of (111) plane in the high input gas ratio region (α = 3-10). Faceted columnar grain structure showed the preferred orientation of (220) plane at the low input gas ratios (α = 1-2). The growth behavior of CVD SiC films with the input gas ratio was correlated with the change of the deposition mechanism from surface kinetics to mass transfer.

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The effect of input gas ratio on the growth behavior of chemical vapor deposited SiC films

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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