The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si 1-xGe x

Dae Hong Ko; Sun Wook Kim; Sangmo Koo; Mijin Jung; Hoo Jeong Lee

doi:10.1109/ISTDM.2012.6222510

The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si _1-xGe _x

Dae Hong Ko, Sun Wook Kim, Sangmo Koo, Mijin Jung, Hoo Jeong Lee

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

This study reports on Ni germanosilicide formation on recessed Si _0.82Ge _0.18 source/drain structures and its effects on channel strain. A combination of transmission electron microscopy techniques,including nanobeam diffraction, shed some light on a previously unrecognized factor in the channel strain evolution during silicidation: a Ge accumulation layer produced at the bottom of the germanosilicide layer. The formation of such a Ge rich layer added an additional compressive strain to the channel strain upon moderate silicidation, while the contribution of thermal strain arising from the cooling cycle became dominant in an excessively silicided sample, which turned the channel strain into a tensile value.

Original language	English
Title of host publication	2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Pages	162-163
Number of pages	2
DOIs	https://doi.org/10.1109/ISTDM.2012.6222510
Publication status	Published - 2012
Event	6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States Duration: 2012 Jun 4 → 2012 Jun 6

Publication series

Name	2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

Other

Other	6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
Country/Territory	United States
City	Berkeley, CA
Period	12/6/4 → 12/6/6

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/ISTDM.2012.6222510

Cite this

Ko, D. H., Kim, S. W., Koo, S., Jung, M., & Lee, H. J. (2012). The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si _1-xGe _x In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (pp. 162-163). Article 6222510 (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings). https://doi.org/10.1109/ISTDM.2012.6222510

Ko, Dae Hong ; Kim, Sun Wook ; Koo, Sangmo et al. / The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si _1-xGe _x 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. pp. 162-163 (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings).

@inproceedings{fdc695c711484daf8199b3a66f257a1f,

title = "The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si 1-xGe x ",

abstract = "This study reports on Ni germanosilicide formation on recessed Si 0.82Ge 0.18 source/drain structures and its effects on channel strain. A combination of transmission electron microscopy techniques,including nanobeam diffraction, shed some light on a previously unrecognized factor in the channel strain evolution during silicidation: a Ge accumulation layer produced at the bottom of the germanosilicide layer. The formation of such a Ge rich layer added an additional compressive strain to the channel strain upon moderate silicidation, while the contribution of thermal strain arising from the cooling cycle became dominant in an excessively silicided sample, which turned the channel strain into a tensile value.",

author = "Ko, {Dae Hong} and Kim, {Sun Wook} and Sangmo Koo and Mijin Jung and Lee, {Hoo Jeong}",

year = "2012",

doi = "10.1109/ISTDM.2012.6222510",

language = "English",

isbn = "9781457718625",

series = "2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings",

pages = "162--163",

booktitle = "2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings",

note = "6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 ; Conference date: 04-06-2012 Through 06-06-2012",

}

Ko, DH, Kim, SW, Koo, S, Jung, M & Lee, HJ 2012, The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si _1-xGe _x in 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings., 6222510, 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings, pp. 162-163, 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, United States, 12/6/4. https://doi.org/10.1109/ISTDM.2012.6222510

The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si _1-xGe _x . / Ko, Dae Hong; Kim, Sun Wook; Koo, Sangmo et al.
2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. p. 162-163 6222510 (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - This study reports on Ni germanosilicide formation on recessed Si 0.82Ge 0.18 source/drain structures and its effects on channel strain. A combination of transmission electron microscopy techniques,including nanobeam diffraction, shed some light on a previously unrecognized factor in the channel strain evolution during silicidation: a Ge accumulation layer produced at the bottom of the germanosilicide layer. The formation of such a Ge rich layer added an additional compressive strain to the channel strain upon moderate silicidation, while the contribution of thermal strain arising from the cooling cycle became dominant in an excessively silicided sample, which turned the channel strain into a tensile value.

AB - This study reports on Ni germanosilicide formation on recessed Si 0.82Ge 0.18 source/drain structures and its effects on channel strain. A combination of transmission electron microscopy techniques,including nanobeam diffraction, shed some light on a previously unrecognized factor in the channel strain evolution during silicidation: a Ge accumulation layer produced at the bottom of the germanosilicide layer. The formation of such a Ge rich layer added an additional compressive strain to the channel strain upon moderate silicidation, while the contribution of thermal strain arising from the cooling cycle became dominant in an excessively silicided sample, which turned the channel strain into a tensile value.

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BT - 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

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Ko DH, Kim SW, Koo S, Jung M, Lee HJ. The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si _1-xGe _x In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. p. 162-163. 6222510. (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings). doi: 10.1109/ISTDM.2012.6222510