The effect of gate length on channel strain of recessed source/drain Si 1-xC x

Dae Hong Ko; Sun Wook Kim; Dae Seop Byeon; Sangmo Koo; Mijin Jung; Saurabh Chopra; Yihwan Kim; Hoo Jeong Lee

doi:10.1109/ISTDM.2012.6222509

The effect of gate length on channel strain of recessed source/drain Si _1-xC _x

Dae Hong Ko, Sun Wook Kim, Dae Seop Byeon, Sangmo Koo, Mijin Jung, Saurabh Chopra, Yihwan Kim, Hoo Jeong Lee

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this study, we investigated the effects of the dimensional scaling of n-channel field-effect transistors on the channel strain. We employed nanobeam diffraction to independently determine the effects of scaling of two major transistor dimensions (gate and source/ drain length) on the channel strain. Both these parameters influenced the channel strain, but in the opposite directions: the channel strain increased with the gate length decreasing, while declining with the reduction of the source/ drain length. Using device simulation, we also considered the combined effects of all the main scaling factors, disclosing that the strain decreased with the reduction of the dimensions.

Original language	English
Title of host publication	2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Pages	160-161
Number of pages	2
DOIs	https://doi.org/10.1109/ISTDM.2012.6222509
Publication status	Published - 2012
Event	6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States Duration: 2012 Jun 4 → 2012 Jun 6

Publication series

Name	2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

Other

Other	6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
Country/Territory	United States
City	Berkeley, CA
Period	12/6/4 → 12/6/6

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/ISTDM.2012.6222509

Cite this

Ko, D. H., Kim, S. W., Byeon, D. S., Koo, S., Jung, M., Chopra, S., Kim, Y., & Lee, H. J. (2012). The effect of gate length on channel strain of recessed source/drain Si _1-xC _x In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (pp. 160-161). Article 6222509 (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings). https://doi.org/10.1109/ISTDM.2012.6222509

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title = "The effect of gate length on channel strain of recessed source/drain Si 1-xC x ",

abstract = "In this study, we investigated the effects of the dimensional scaling of n-channel field-effect transistors on the channel strain. We employed nanobeam diffraction to independently determine the effects of scaling of two major transistor dimensions (gate and source/ drain length) on the channel strain. Both these parameters influenced the channel strain, but in the opposite directions: the channel strain increased with the gate length decreasing, while declining with the reduction of the source/ drain length. Using device simulation, we also considered the combined effects of all the main scaling factors, disclosing that the strain decreased with the reduction of the dimensions.",

author = "Ko, {Dae Hong} and Kim, {Sun Wook} and Byeon, {Dae Seop} and Sangmo Koo and Mijin Jung and Saurabh Chopra and Yihwan Kim and Lee, {Hoo Jeong}",

year = "2012",

doi = "10.1109/ISTDM.2012.6222509",

language = "English",

isbn = "9781457718625",

series = "2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings",

pages = "160--161",

booktitle = "2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings",

note = "6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 ; Conference date: 04-06-2012 Through 06-06-2012",

}

Ko, DH, Kim, SW, Byeon, DS, Koo, S, Jung, M, Chopra, S, Kim, Y & Lee, HJ 2012, The effect of gate length on channel strain of recessed source/drain Si _1-xC _x in 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings., 6222509, 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings, pp. 160-161, 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, United States, 12/6/4. https://doi.org/10.1109/ISTDM.2012.6222509

The effect of gate length on channel strain of recessed source/drain Si _1-xC _x . / Ko, Dae Hong; Kim, Sun Wook; Byeon, Dae Seop et al.
2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. p. 160-161 6222509 (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Ko, Dae Hong

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AU - Chopra, Saurabh

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AB - In this study, we investigated the effects of the dimensional scaling of n-channel field-effect transistors on the channel strain. We employed nanobeam diffraction to independently determine the effects of scaling of two major transistor dimensions (gate and source/ drain length) on the channel strain. Both these parameters influenced the channel strain, but in the opposite directions: the channel strain increased with the gate length decreasing, while declining with the reduction of the source/ drain length. Using device simulation, we also considered the combined effects of all the main scaling factors, disclosing that the strain decreased with the reduction of the dimensions.

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Ko DH, Kim SW, Byeon DS, Koo S, Jung M, Chopra S et al. The effect of gate length on channel strain of recessed source/drain Si _1-xC _x In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. p. 160-161. 6222509. (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings). doi: 10.1109/ISTDM.2012.6222509