The effect of a Si capping layer on RF characteristics of high-k/metal gate SiGe channel pMOSFETs

Min Sang Park, Kyong Taek Lee, Chang Yong Kang, Gil Bok Choi, Hyun Chul Sagong, Chang Woo Sohn, Byoung Gi Min, Jungwoo Oh, Prashant Majhi, Hsing Huang Tseng, Jack C. Lee, Jeong Soo Lee, Raj Jammy, Yoon Ha Jeong

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We present a comparative study of the effects of a Si capping layer on SiGe channel pMOSFETs used for radio-frequency (RF) applications. In Si-capped devices, the drive current increases because Si/SiGe heterojunction layers form a SiGe quantum well, which reduces carrier scattering. Conversely, SiGe samples without a Si capping layer suffer severe interface degradation, due to Ge diffusing into the gate dielectric. Devices using a Si capping layer have enhanced RF performance and reduced low-frequency noise, which is a key factor affecting phase noise. There is an increase in the RF figures of merit. These benefits indicate that a Si capping layer should be used in SiGe channel pMOSFETs.

Original languageEnglish
Article number5555934
Pages (from-to)1104-1106
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
Publication statusPublished - 2010 Oct

Bibliographical note

Funding Information:
Manuscript received June 10, 2010; revised July 18, 2010; accepted July 18, 2010. Date of publication August 23, 2010; date of current version September 24, 2010. This work was supported in part by the Ministry of Education, Science and Technology through the National Research Foundation of Korea under the World Class University Program R31-2008-000-10100-0, by the BK21 program, by the “System IC 2010” project, and by the National Center for Nanomaterials Technology, Korea. The review of this letter was arranged by Editor J. Cai.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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