The Effect of a Deep Virtual Guard Ring on the Device Characteristics of Silicon Single Photon Avalanche Diodes

Dongseok Shin; Byungchoul Park; Youngcheol Chae; Ilgu Yun

doi:10.1109/TED.2019.2913714

The Effect of a Deep Virtual Guard Ring on the Device Characteristics of Silicon Single Photon Avalanche Diodes

Dongseok Shin, Byungchoul Park, Youngcheol Chae, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Silicon single-photon avalanche diodes (Si-SPADs) fabricated with standard CMOS technology and providing the advantages of low noise, low cost, and compatibility with additional circuits are promising candidates for single-photon detection fields. The guard ring is a key component of SPADs, which prevents premature edge breakdown and improves the electric field distribution to the intended multiplication region. The choice of proper physical dimensions, especially the active radius (AR) and the size of the guard ring, is important for the better performance of Si-SPADs. In this paper, a Si-SPAD with a deep virtual guard ring fabricated through deep well diffusion is proposed and the effect of the physical variation of the AR and guard ring width on the device characteristics is investigated. In addition, the effect of physical variation on the device characteristics is analyzed and explained by means of technology computer-aided design (TCAD) simulations.

Original language	English
Article number	8710606
Pages (from-to)	2986-2991
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	7
DOIs	https://doi.org/10.1109/TED.2019.2913714
Publication status	Published - 2019 Jul

Bibliographical note

Funding Information:
Manuscript received April 2, 2019; revised April 17, 2019; accepted April 25, 2019. Date of publication May 9, 2019; date of current version June 19, 2019. This work was supported in part by the Ministry of Trade, Industry and Energy through Industrial Technology Innovation Program [the development of a 50-m range Time of Flight (ToF) CMOS sensor, an optical system, and signal processing for automotive] under Grant 10063634 and in part by the Institute of BioMed-IT, Energy-IT and Smart-IT Technology (BEST), Yonsei University through Brain Korea 21-Plus Program. The EDA tool was supported by the IC Design Education Center (IDEC), Seoul, South Korea. The review of this paper was arranged by Editor C. Surya. (Corresponding author: Ilgu Yun.) The authors are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea (e-mail: iyun@yonsei.ac.kr).

Publisher Copyright:
© 1963-2012 IEEE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2019.2913714

Cite this

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abstract = "Silicon single-photon avalanche diodes (Si-SPADs) fabricated with standard CMOS technology and providing the advantages of low noise, low cost, and compatibility with additional circuits are promising candidates for single-photon detection fields. The guard ring is a key component of SPADs, which prevents premature edge breakdown and improves the electric field distribution to the intended multiplication region. The choice of proper physical dimensions, especially the active radius (AR) and the size of the guard ring, is important for the better performance of Si-SPADs. In this paper, a Si-SPAD with a deep virtual guard ring fabricated through deep well diffusion is proposed and the effect of the physical variation of the AR and guard ring width on the device characteristics is investigated. In addition, the effect of physical variation on the device characteristics is analyzed and explained by means of technology computer-aided design (TCAD) simulations.",

author = "Dongseok Shin and Byungchoul Park and Youngcheol Chae and Ilgu Yun",

note = "Funding Information: Manuscript received April 2, 2019; revised April 17, 2019; accepted April 25, 2019. Date of publication May 9, 2019; date of current version June 19, 2019. This work was supported in part by the Ministry of Trade, Industry and Energy through Industrial Technology Innovation Program [the development of a 50-m range Time of Flight (ToF) CMOS sensor, an optical system, and signal processing for automotive] under Grant 10063634 and in part by the Institute of BioMed-IT, Energy-IT and Smart-IT Technology (BEST), Yonsei University through Brain Korea 21-Plus Program. The EDA tool was supported by the IC Design Education Center (IDEC), Seoul, South Korea. The review of this paper was arranged by Editor C. Surya. (Corresponding author: Ilgu Yun.) The authors are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea (e-mail: iyun@yonsei.ac.kr). Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

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The Effect of a Deep Virtual Guard Ring on the Device Characteristics of Silicon Single Photon Avalanche Diodes

Abstract

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