The determination of modified barrier heights in Ti/GaN nano-Schottky diodes at high temperature

Seung Yong Lee, Tae Hong Kim, Nam Kyu Cho, Han Kyu Seong, Heon Jin Choi, Byung Guk Ahn, Sang Kwon Lee

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We have investigated the size-effect of the nano-Schottky diodes on the electrical transport properties and the temperature-dependent current transport mechanism in a metal-semiconductor nanowire junction (a Ti/GaN nano-Schottky diode) using current-voltage characterization in the range of 300-423 K. We found that the modified mean Schottky barrier height (SBH) was ~0.7 eV with a standard deviation of ~0.14 V using a Gaussian distribution model of the barrier heights. The slightly high value of the modified mean SBH (~0.11 eV) compared to the results from the thin-film based Ti/GaN Schottky diodes could be due to an additional oxide layer at the interface between the Ti and GaN nanowires. Moreover, we found that the abnormal behavior of the barrier heights and the ideality factors in a Ti/GaN nano-Schottky diode at a temperature below 423 K could be explained by a combination of the enhancement of the tunneling current and a model with a Gaussian distribution of the barrier heights.

Original languageEnglish
Pages (from-to)5042-5046
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Issue number10
Publication statusPublished - 2008 Oct

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics


Dive into the research topics of 'The determination of modified barrier heights in Ti/GaN nano-Schottky diodes at high temperature'. Together they form a unique fingerprint.

Cite this