The correlation of the number and the phase uncertainties in the loop-type single-electron tunneling device

Jinhee Kim; Ju Jin Kim; Sangchul Oh; Jeong O. Lee; Kyung Hwa Yoo; Se Il Park; Kyu Tae Kim

doi:10.1016/S0921-4526(99)03040-9

The correlation of the number and the phase uncertainties in the loop-type single-electron tunneling device

Jinhee Kim, Ju Jin Kim, Sangchul Oh, Jeong O. Lee, Kyung Hwa Yoo, Se Il Park, Kyu Tae Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The electric and the magnetic transport properties of the loop-type Al/Al₂O₃/Al single-electron tunneling device were studied. Even for the sample with charging energy about one order of magnitude greater than the Josephson coupling energy, the magnetoresistance showed h/2e-oscillation at low bias voltage, attributed to the phase-coherent pair tunneling. The behavior of the magnetoresistance depends on the gate voltage, showing large and noiseless oscillations with the even number of excess charges but small and noisy oscillations with the odd number of excess charges in the metal islands.

Original language	English
Pages (from-to)	1830-1831
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	284-288
Issue number	PART II
DOIs	https://doi.org/10.1016/S0921-4526(99)03040-9
Publication status	Published - 2000

Bibliographical note

Funding Information:
This work was supported in part by KRISS (Project No. 99-0502-001) and also by MOST through Nanostructure Project.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(99)03040-9

Cite this

@article{3603b3aa4a5149fa866bf660d41525b3,

title = "The correlation of the number and the phase uncertainties in the loop-type single-electron tunneling device",

abstract = "The electric and the magnetic transport properties of the loop-type Al/Al2O3/Al single-electron tunneling device were studied. Even for the sample with charging energy about one order of magnitude greater than the Josephson coupling energy, the magnetoresistance showed h/2e-oscillation at low bias voltage, attributed to the phase-coherent pair tunneling. The behavior of the magnetoresistance depends on the gate voltage, showing large and noiseless oscillations with the even number of excess charges but small and noisy oscillations with the odd number of excess charges in the metal islands.",

author = "Jinhee Kim and Kim, {Ju Jin} and Sangchul Oh and Lee, {Jeong O.} and Yoo, {Kyung Hwa} and Park, {Se Il} and Kim, {Kyu Tae}",

note = "Funding Information: This work was supported in part by KRISS (Project No. 99-0502-001) and also by MOST through Nanostructure Project.",

year = "2000",

doi = "10.1016/S0921-4526(99)03040-9",

language = "English",

volume = "284-288",

pages = "1830--1831",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "PART II",

}

TY - JOUR

T1 - The correlation of the number and the phase uncertainties in the loop-type single-electron tunneling device

AU - Kim, Jinhee

AU - Kim, Ju Jin

AU - Oh, Sangchul

AU - Lee, Jeong O.

AU - Yoo, Kyung Hwa

AU - Park, Se Il

AU - Kim, Kyu Tae

N1 - Funding Information: This work was supported in part by KRISS (Project No. 99-0502-001) and also by MOST through Nanostructure Project.

PY - 2000

Y1 - 2000

N2 - The electric and the magnetic transport properties of the loop-type Al/Al2O3/Al single-electron tunneling device were studied. Even for the sample with charging energy about one order of magnitude greater than the Josephson coupling energy, the magnetoresistance showed h/2e-oscillation at low bias voltage, attributed to the phase-coherent pair tunneling. The behavior of the magnetoresistance depends on the gate voltage, showing large and noiseless oscillations with the even number of excess charges but small and noisy oscillations with the odd number of excess charges in the metal islands.

AB - The electric and the magnetic transport properties of the loop-type Al/Al2O3/Al single-electron tunneling device were studied. Even for the sample with charging energy about one order of magnitude greater than the Josephson coupling energy, the magnetoresistance showed h/2e-oscillation at low bias voltage, attributed to the phase-coherent pair tunneling. The behavior of the magnetoresistance depends on the gate voltage, showing large and noiseless oscillations with the even number of excess charges but small and noisy oscillations with the odd number of excess charges in the metal islands.

UR - http://www.scopus.com/inward/record.url?scp=0033703548&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033703548&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)03040-9

DO - 10.1016/S0921-4526(99)03040-9

M3 - Article

AN - SCOPUS:0033703548

SN - 0921-4526

VL - 284-288

SP - 1830

EP - 1831

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - PART II

ER -

The correlation of the number and the phase uncertainties in the loop-type single-electron tunneling device

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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