The correlation between electron density and anchoring strength in the inorganic vertical alignment layer

Byoung Har Hwang; Young Bum Yoo; Jin Young Oh; Soo Sang Chae; Hong Koo Baik; Se Jong Lee; Kie Moon Song

doi:10.1063/1.3211117

The correlation between electron density and anchoring strength in the inorganic vertical alignment layer

Byoung Har Hwang, Young Bum Yoo, Jin Young Oh, Soo Sang Chae, Hong Koo Baik, Se Jong Lee, Kie Moon Song

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The relationship between the liquid crystal (LC) alignment and the density of the silicon oxide alignment layer was studied by theoretical and experimental approaches. The thin films were deposited by various methods and conditions, and then their densities were analyzed by x-ray reflectivity measurement. The alignment of LC was highly dependent on their densities, which we found to be closely related to the number of interacting dipoles. Ultimately, a -SiO _x thin film with lower density gives rise to the uniform vertical alignment of liquid crystal.

Original language	English
Article number	081105
Journal	Applied Physics Letters
Volume	95
Issue number	8
DOIs	https://doi.org/10.1063/1.3211117
Publication status	Published - 2009

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (Grant No. 20090079876) and also was financially supported by Samsung Electronics, Co., Ltd.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3211117

Cite this

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title = "The correlation between electron density and anchoring strength in the inorganic vertical alignment layer",

abstract = "The relationship between the liquid crystal (LC) alignment and the density of the silicon oxide alignment layer was studied by theoretical and experimental approaches. The thin films were deposited by various methods and conditions, and then their densities were analyzed by x-ray reflectivity measurement. The alignment of LC was highly dependent on their densities, which we found to be closely related to the number of interacting dipoles. Ultimately, a -SiO x thin film with lower density gives rise to the uniform vertical alignment of liquid crystal.",

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AU - Yoo, Young Bum

AU - Oh, Jin Young

AU - Chae, Soo Sang

AU - Baik, Hong Koo

AU - Lee, Se Jong

AU - Song, Kie Moon

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AB - The relationship between the liquid crystal (LC) alignment and the density of the silicon oxide alignment layer was studied by theoretical and experimental approaches. The thin films were deposited by various methods and conditions, and then their densities were analyzed by x-ray reflectivity measurement. The alignment of LC was highly dependent on their densities, which we found to be closely related to the number of interacting dipoles. Ultimately, a -SiO x thin film with lower density gives rise to the uniform vertical alignment of liquid crystal.

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The correlation between electron density and anchoring strength in the inorganic vertical alignment layer

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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