The characterization of etched GaAs surface with HCl or H3PO4 solutions

Min Gu Kang; Seung Hoon Sa; Hyung Ho Park; Kyung Soo Suh; Kyung Hui Oh

doi:10.1016/S0040-6090(97)00485-9

The characterization of etched GaAs surface with HCl or H₃PO₄ solutions

Min Gu Kang, Seung Hoon Sa, Hyung Ho Park, Kyung Soo Suh, Kyung Hui Oh

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The chemical and morphological behavior of a GaAs surface etched with HCl or H₃PO₄ solutions was characterized using X-ray photoelectron spectroscopy and atomic force microscopy. With HCl and H₃PO₄ treatments, Ga-Cl and Ga-PO₄ residues were produced, respectively. Elemental As initially formed on bare GaAs increased during the etching of the GaAs substrate in all treatments due to preferential etching of Ga. After removal of the native oxide with HCl treatment, selective-corrosive attack occurred, resulting in a deep hole, on which the flatness of the GaAs surface depends. In particular, the different etch rates between Ga (111) and the other planes with H₃PO₄ solution led to a severely undulated GaAs surface, which consisted of many hollows and Ga (111) facets. The facets and hollows were revealed to be regularly arrayed and elongated in the [110] direction.

Original language	English
Pages (from-to)	634-642
Number of pages	9
Journal	Thin Solid Films
Volume	308-309
Issue number	1-4
DOIs	https://doi.org/10.1016/S0040-6090(97)00485-9
Publication status	Published - 1997 Oct 31

Bibliographical note

Funding Information:
This research was performed under the auspices of the Electronics and Telecommunications Research Institute (ETRI) in Korea under Contract No. 92206.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(97)00485-9

Cite this

@article{596e2f79a2f64131bb0a8f522e173046,

title = "The characterization of etched GaAs surface with HCl or H3PO4 solutions",

abstract = "The chemical and morphological behavior of a GaAs surface etched with HCl or H3PO4 solutions was characterized using X-ray photoelectron spectroscopy and atomic force microscopy. With HCl and H3PO4 treatments, Ga-Cl and Ga-PO4 residues were produced, respectively. Elemental As initially formed on bare GaAs increased during the etching of the GaAs substrate in all treatments due to preferential etching of Ga. After removal of the native oxide with HCl treatment, selective-corrosive attack occurred, resulting in a deep hole, on which the flatness of the GaAs surface depends. In particular, the different etch rates between Ga (111) and the other planes with H3PO4 solution led to a severely undulated GaAs surface, which consisted of many hollows and Ga (111) facets. The facets and hollows were revealed to be regularly arrayed and elongated in the [110] direction.",

author = "Kang, {Min Gu} and Sa, {Seung Hoon} and Park, {Hyung Ho} and Suh, {Kyung Soo} and Oh, {Kyung Hui}",

note = "Funding Information: This research was performed under the auspices of the Electronics and Telecommunications Research Institute (ETRI) in Korea under Contract No. 92206.",

year = "1997",

month = oct,

day = "31",

doi = "10.1016/S0040-6090(97)00485-9",

language = "English",

volume = "308-309",

pages = "634--642",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - The characterization of etched GaAs surface with HCl or H3PO4 solutions

AU - Kang, Min Gu

AU - Sa, Seung Hoon

AU - Park, Hyung Ho

AU - Suh, Kyung Soo

AU - Oh, Kyung Hui

N1 - Funding Information: This research was performed under the auspices of the Electronics and Telecommunications Research Institute (ETRI) in Korea under Contract No. 92206.

PY - 1997/10/31

Y1 - 1997/10/31

N2 - The chemical and morphological behavior of a GaAs surface etched with HCl or H3PO4 solutions was characterized using X-ray photoelectron spectroscopy and atomic force microscopy. With HCl and H3PO4 treatments, Ga-Cl and Ga-PO4 residues were produced, respectively. Elemental As initially formed on bare GaAs increased during the etching of the GaAs substrate in all treatments due to preferential etching of Ga. After removal of the native oxide with HCl treatment, selective-corrosive attack occurred, resulting in a deep hole, on which the flatness of the GaAs surface depends. In particular, the different etch rates between Ga (111) and the other planes with H3PO4 solution led to a severely undulated GaAs surface, which consisted of many hollows and Ga (111) facets. The facets and hollows were revealed to be regularly arrayed and elongated in the [110] direction.

AB - The chemical and morphological behavior of a GaAs surface etched with HCl or H3PO4 solutions was characterized using X-ray photoelectron spectroscopy and atomic force microscopy. With HCl and H3PO4 treatments, Ga-Cl and Ga-PO4 residues were produced, respectively. Elemental As initially formed on bare GaAs increased during the etching of the GaAs substrate in all treatments due to preferential etching of Ga. After removal of the native oxide with HCl treatment, selective-corrosive attack occurred, resulting in a deep hole, on which the flatness of the GaAs surface depends. In particular, the different etch rates between Ga (111) and the other planes with H3PO4 solution led to a severely undulated GaAs surface, which consisted of many hollows and Ga (111) facets. The facets and hollows were revealed to be regularly arrayed and elongated in the [110] direction.

UR - http://www.scopus.com/inward/record.url?scp=0031245442&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031245442&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(97)00485-9

DO - 10.1016/S0040-6090(97)00485-9

M3 - Article

AN - SCOPUS:0031245442

SN - 0040-6090

VL - 308-309

SP - 634

EP - 642

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-4

ER -