The C2H2 gas effect on the growth behavior of remote plasma enhanced CVD SiC:H film

Sung Hyuk Cho; Young Jin Lee; Doo Jin Choi; Tae Song Kim

doi:10.1007/s10832-006-9437-8

The C₂H₂ gas effect on the growth behavior of remote plasma enhanced CVD SiC:H film

Sung Hyuk Cho, Young Jin Lee, Doo Jin Choi, Tae Song Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

SiC:H films were produced in a remote plasma enhanced chemical vapor deposition (RPE-CVD) system. The HMDS was chosen as the primary source gas and was fixed at constant flow rate of 10 sccm. The C₂H₂ gas input amount was varied from 3 to 200 sccm for the study of carbon effect on the film stoichiometry and bonding properties. The deposition temperature of the substrate was fixed at 400°C, and the plasma power was fixed at 300 W. Using auger electron spectroscopy, the depth profile of the film was investigated with C₂H₂ flow rate changes. The C₂H ₂ played an important role in the transition between sp² and sp³ carbon hybridization bonds, which affected the growth behavior and properties of the films.

Original language	English
Pages (from-to)	811-816
Number of pages	6
Journal	Journal of Electroceramics
Volume	17
Issue number	2-4
DOIs	https://doi.org/10.1007/s10832-006-9437-8
Publication status	Published - 2006 Dec

Bibliographical note

Funding Information:
Acknowledgment This research was supported by the Intelligent Mic-rosystem Center (IMC; http://www.microsystem.re.kr), the first launched center of 21st Century Frontier R&D Program sponsored by Korean Ministry of Science and Technology.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Ceramics and Composites
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1007/s10832-006-9437-8

Cite this

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title = "The C2H2 gas effect on the growth behavior of remote plasma enhanced CVD SiC:H film",

abstract = "SiC:H films were produced in a remote plasma enhanced chemical vapor deposition (RPE-CVD) system. The HMDS was chosen as the primary source gas and was fixed at constant flow rate of 10 sccm. The C2H2 gas input amount was varied from 3 to 200 sccm for the study of carbon effect on the film stoichiometry and bonding properties. The deposition temperature of the substrate was fixed at 400°C, and the plasma power was fixed at 300 W. Using auger electron spectroscopy, the depth profile of the film was investigated with C2H2 flow rate changes. The C2H 2 played an important role in the transition between sp2 and sp3 carbon hybridization bonds, which affected the growth behavior and properties of the films.",

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note = "Funding Information: Acknowledgment This research was supported by the Intelligent Mic-rosystem Center (IMC; http://www.microsystem.re.kr), the first launched center of 21st Century Frontier R&D Program sponsored by Korean Ministry of Science and Technology.",

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AU - Kim, Tae Song

N1 - Funding Information: Acknowledgment This research was supported by the Intelligent Mic-rosystem Center (IMC; http://www.microsystem.re.kr), the first launched center of 21st Century Frontier R&D Program sponsored by Korean Ministry of Science and Technology.

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