The C2H2 gas effect on the growth behavior of remote plasma enhanced CVD SiC:H film

Sung Hyuk Cho, Young Jin Lee, Doo Jin Choi, Tae Song Kim

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3 Citations (Scopus)


SiC:H films were produced in a remote plasma enhanced chemical vapor deposition (RPE-CVD) system. The HMDS was chosen as the primary source gas and was fixed at constant flow rate of 10 sccm. The C2H2 gas input amount was varied from 3 to 200 sccm for the study of carbon effect on the film stoichiometry and bonding properties. The deposition temperature of the substrate was fixed at 400°C, and the plasma power was fixed at 300 W. Using auger electron spectroscopy, the depth profile of the film was investigated with C2H2 flow rate changes. The C2H 2 played an important role in the transition between sp2 and sp3 carbon hybridization bonds, which affected the growth behavior and properties of the films.

Original languageEnglish
Pages (from-to)811-816
Number of pages6
JournalJournal of Electroceramics
Issue number2-4
Publication statusPublished - 2006 Dec

Bibliographical note

Funding Information:
Acknowledgment This research was supported by the Intelligent Mic-rosystem Center (IMC;, the first launched center of 21st Century Frontier R&D Program sponsored by Korean Ministry of Science and Technology.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Ceramics and Composites
  • Materials Chemistry
  • Electrical and Electronic Engineering


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