TY - GEN
T1 - The application of atomic layer deposition for transparent thin film transistor
AU - Lim, S. J.
AU - Kwon, Soonju
AU - Kim, H.
PY - 2006
Y1 - 2006
N2 - The ability of ALD to deposit thin films with great uniformity over large area and low temperature deposition make it viable technique for flexible flat panel display. Recently, transparent thin film transistor is being considered as important component for next generation display device. For this, all layers including active channel layer, gate insulator, source, drain, and gate should be made of transparent materials. For example, ZnO is widely studied as a promising material for active channel layer of TTFT. In addition, high k materials including Al2O3, and transparent conducting oxide such as Al-doped ZnO can be used for gate insulator and electrode, respectively. In this study, we investigated the ALD process for ZnO, Al 2O3, and Al-doped ZnO and fabricated the TTFT from all ALD based thin film deposition technology. The electrical properties of ZnO thin films depending on the growth conditions for application as an active channel layer of TFT were discussed as a function of ALD process conditions.
AB - The ability of ALD to deposit thin films with great uniformity over large area and low temperature deposition make it viable technique for flexible flat panel display. Recently, transparent thin film transistor is being considered as important component for next generation display device. For this, all layers including active channel layer, gate insulator, source, drain, and gate should be made of transparent materials. For example, ZnO is widely studied as a promising material for active channel layer of TTFT. In addition, high k materials including Al2O3, and transparent conducting oxide such as Al-doped ZnO can be used for gate insulator and electrode, respectively. In this study, we investigated the ALD process for ZnO, Al 2O3, and Al-doped ZnO and fabricated the TTFT from all ALD based thin film deposition technology. The electrical properties of ZnO thin films depending on the growth conditions for application as an active channel layer of TFT were discussed as a function of ALD process conditions.
KW - Atomic layer deposition
KW - Transparent thin film transistor
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=50249125849&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50249125849&partnerID=8YFLogxK
U2 - 10.1109/NMDC.2006.4388939
DO - 10.1109/NMDC.2006.4388939
M3 - Conference contribution
AN - SCOPUS:50249125849
SN - 1424405408
SN - 9781424405404
T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
SP - 634
EP - 635
BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Y2 - 22 October 2006 through 25 October 2006
ER -