Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates

Jooho Lee; Su Chan Lee; Yongsung Kim; Jinseong Heo; Kiyoung Lee; Dongwook Lee; Jaekwan Kim; Sunghee Lee; Chang Seung Lee; Min Sik Nam; Seong Chan Jun

doi:10.1088/0957-4484/27/7/075303

Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates

Jooho Lee, Su Chan Lee, Yongsung Kim, Jinseong Heo, Kiyoung Lee, Dongwook Lee, Jaekwan Kim, Sunghee Lee, Chang Seung Lee, Min Sik Nam, Seong Chan Jun

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We developed an effective graphene transfer method for graphene/silicon Schottky diodes on a wafer as large as 6 inches. Graphene grown on a large scale substrate was passivated and sealed with a gold layer, protecting graphene from any possible contaminant and keeping good electrical contact. The Au/graphene was transferred by the tension-assisted transfer process without polymer residues. The gold film itself was used directly as the electrodes of a Schottky diode. We demonstrated wafer-scale integration of graphene/silicon Schottky diode using the proposed transfer process. The transmission electron microscopy analysis and relatively low ideality factor of the diodes indicated fewer defects on the interface than those obtained using the conventional poly(methyl methacrylate)-assisted transfer method. We further demonstrated gas sensors as an application of graphene Schottky diodes.

Original language	English
Article number	075303
Journal	Nanotechnology
Volume	27
Issue number	7
DOIs	https://doi.org/10.1088/0957-4484/27/7/075303
Publication status	Published - 2016 Jan 20

Bibliographical note

Funding Information:
This work was partially supported by the Priority Research Centers Program (2009-0093823), Basic Science Research Program (2013R1A1A2A10013147), and the Korean Government (MSIP) (No. 2015R1A5A1037668) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST).

Publisher Copyright:
© 2016 IOP Publishing Ltd. All rights reserved.

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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Cite this

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title = "Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates",

abstract = "We developed an effective graphene transfer method for graphene/silicon Schottky diodes on a wafer as large as 6 inches. Graphene grown on a large scale substrate was passivated and sealed with a gold layer, protecting graphene from any possible contaminant and keeping good electrical contact. The Au/graphene was transferred by the tension-assisted transfer process without polymer residues. The gold film itself was used directly as the electrodes of a Schottky diode. We demonstrated wafer-scale integration of graphene/silicon Schottky diode using the proposed transfer process. The transmission electron microscopy analysis and relatively low ideality factor of the diodes indicated fewer defects on the interface than those obtained using the conventional poly(methyl methacrylate)-assisted transfer method. We further demonstrated gas sensors as an application of graphene Schottky diodes.",

author = "Jooho Lee and Lee, {Su Chan} and Yongsung Kim and Jinseong Heo and Kiyoung Lee and Dongwook Lee and Jaekwan Kim and Sunghee Lee and Lee, {Chang Seung} and Nam, {Min Sik} and Jun, {Seong Chan}",

note = "Funding Information: This work was partially supported by the Priority Research Centers Program (2009-0093823), Basic Science Research Program (2013R1A1A2A10013147), and the Korean Government (MSIP) (No. 2015R1A5A1037668) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST). Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd. All rights reserved.",

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AU - Lee, Dongwook

AU - Kim, Jaekwan

AU - Lee, Sunghee

AU - Lee, Chang Seung

AU - Nam, Min Sik

AU - Jun, Seong Chan

N1 - Funding Information: This work was partially supported by the Priority Research Centers Program (2009-0093823), Basic Science Research Program (2013R1A1A2A10013147), and the Korean Government (MSIP) (No. 2015R1A5A1037668) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST). Publisher Copyright: © 2016 IOP Publishing Ltd. All rights reserved.

PY - 2016/1/20

Y1 - 2016/1/20

N2 - We developed an effective graphene transfer method for graphene/silicon Schottky diodes on a wafer as large as 6 inches. Graphene grown on a large scale substrate was passivated and sealed with a gold layer, protecting graphene from any possible contaminant and keeping good electrical contact. The Au/graphene was transferred by the tension-assisted transfer process without polymer residues. The gold film itself was used directly as the electrodes of a Schottky diode. We demonstrated wafer-scale integration of graphene/silicon Schottky diode using the proposed transfer process. The transmission electron microscopy analysis and relatively low ideality factor of the diodes indicated fewer defects on the interface than those obtained using the conventional poly(methyl methacrylate)-assisted transfer method. We further demonstrated gas sensors as an application of graphene Schottky diodes.

AB - We developed an effective graphene transfer method for graphene/silicon Schottky diodes on a wafer as large as 6 inches. Graphene grown on a large scale substrate was passivated and sealed with a gold layer, protecting graphene from any possible contaminant and keeping good electrical contact. The Au/graphene was transferred by the tension-assisted transfer process without polymer residues. The gold film itself was used directly as the electrodes of a Schottky diode. We demonstrated wafer-scale integration of graphene/silicon Schottky diode using the proposed transfer process. The transmission electron microscopy analysis and relatively low ideality factor of the diodes indicated fewer defects on the interface than those obtained using the conventional poly(methyl methacrylate)-assisted transfer method. We further demonstrated gas sensors as an application of graphene Schottky diodes.

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Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates

Abstract

Bibliographical note

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