Temperature-dependent photoluminescence of ZnSe/ZnS quantum dots fabricated under the Stranski-Krastanov mode

Y. G. Kim; Y. S. Joh; J. H. Song; K. S. Baek; S. K. Chang; E. D. Sim

doi:10.1063/1.1612898

Temperature-dependent photoluminescence of ZnSe/ZnS quantum dots fabricated under the Stranski-Krastanov mode

Y. G. Kim, Y. S. Joh, J. H. Song, K. S. Baek, S. K. Chang, E. D. Sim

Department of Physics

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

A study was performed on growing self-assembled ZnSe/ZnS quantum dots (QD) in the Stranski-Krastanov (S-K) mode. It was grown using a metalorganic chemical vapor deposition technique under the atomic-layer epitaxy mode. It was shown that the temperature-dependent behavior of confined carriers in the ZnSe QDs was investigated through photoluminescence (PL) measurements.

Original language	English
Pages (from-to)	2656-2658
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	13
DOIs	https://doi.org/10.1063/1.1612898
Publication status	Published - 2003 Sept 29

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1612898

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abstract = "A study was performed on growing self-assembled ZnSe/ZnS quantum dots (QD) in the Stranski-Krastanov (S-K) mode. It was grown using a metalorganic chemical vapor deposition technique under the atomic-layer epitaxy mode. It was shown that the temperature-dependent behavior of confined carriers in the ZnSe QDs was investigated through photoluminescence (PL) measurements.",

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AU - Chang, S. K.

AU - Sim, E. D.

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Temperature-dependent photoluminescence of ZnSe/ZnS quantum dots fabricated under the Stranski-Krastanov mode

Abstract

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