Temperature dependence of current-voltage characteristics of polycrystalline diamond FETs: modelling and experiment

M. W. Shin; R. J. Trew; G. L. Bilbro; D. L. Dreifus; A. J. Tessmer

doi:10.1007/BF00188194

Temperature dependence of current-voltage characteristics of polycrystalline diamond FETs: modelling and experiment

M. W. Shin, R. J. Trew, G. L. Bilbro, D. L. Dreifus, A. J. Tessmer

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

For the first time, a theoretical model for polycrystalline diamond (PCD) field effect transistors is proposed. The model is accompanied by an investigation of the single crystalline diamond (SCD) FET for the verification of material parameters employed in the simulation. The model runs on a device simulator, PISCES-IIB, and correctly accounts for the temperature-dependent shift of the I-V characteristics from pentode-like to triode-like behaviour as well as the temperature dependent pinch-off and saturation. Agreement between simulated and measured currents is obtained with a higher value of the activation energy for the dopant in PCD than in SCD, as has been reported for silicon.

Original language	English
Pages (from-to)	111-114
Number of pages	4
Journal	Journal of Materials Science: Materials in Electronics
Volume	6
Issue number	2
DOIs	https://doi.org/10.1007/BF00188194
Publication status	Published - 1995 Apr

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1007/BF00188194

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abstract = "For the first time, a theoretical model for polycrystalline diamond (PCD) field effect transistors is proposed. The model is accompanied by an investigation of the single crystalline diamond (SCD) FET for the verification of material parameters employed in the simulation. The model runs on a device simulator, PISCES-IIB, and correctly accounts for the temperature-dependent shift of the I-V characteristics from pentode-like to triode-like behaviour as well as the temperature dependent pinch-off and saturation. Agreement between simulated and measured currents is obtained with a higher value of the activation energy for the dopant in PCD than in SCD, as has been reported for silicon.",

author = "Shin, {M. W.} and Trew, {R. J.} and Bilbro, {G. L.} and Dreifus, {D. L.} and Tessmer, {A. J.}",

year = "1995",

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T1 - Temperature dependence of current-voltage characteristics of polycrystalline diamond FETs

T2 - modelling and experiment

AU - Shin, M. W.

AU - Trew, R. J.

AU - Bilbro, G. L.

AU - Dreifus, D. L.

AU - Tessmer, A. J.

PY - 1995/4

Y1 - 1995/4

N2 - For the first time, a theoretical model for polycrystalline diamond (PCD) field effect transistors is proposed. The model is accompanied by an investigation of the single crystalline diamond (SCD) FET for the verification of material parameters employed in the simulation. The model runs on a device simulator, PISCES-IIB, and correctly accounts for the temperature-dependent shift of the I-V characteristics from pentode-like to triode-like behaviour as well as the temperature dependent pinch-off and saturation. Agreement between simulated and measured currents is obtained with a higher value of the activation energy for the dopant in PCD than in SCD, as has been reported for silicon.

AB - For the first time, a theoretical model for polycrystalline diamond (PCD) field effect transistors is proposed. The model is accompanied by an investigation of the single crystalline diamond (SCD) FET for the verification of material parameters employed in the simulation. The model runs on a device simulator, PISCES-IIB, and correctly accounts for the temperature-dependent shift of the I-V characteristics from pentode-like to triode-like behaviour as well as the temperature dependent pinch-off and saturation. Agreement between simulated and measured currents is obtained with a higher value of the activation energy for the dopant in PCD than in SCD, as has been reported for silicon.

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Temperature dependence of current-voltage characteristics of polycrystalline diamond FETs: modelling and experiment

Abstract

All Science Journal Classification (ASJC) codes

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