Temperature dependence of band alignments in ultrathin Hf-A1-O and Al 2O3 films on p-Si (100)

H. Jin; S. K. Oh; H. J. Kang; Y. S. Lee; M. H. Cho

doi:10.1002/sia.2203

Temperature dependence of band alignments in ultrathin Hf-A1-O and Al ₂O₃ films on p-Si (100)

H. Jin, S. K. Oh, H. J. Kang, Y. S. Lee, M. H. Cho

Department of Physics

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Annealing temperature dependence of band alignments in Hf-Al-O and Al ₂O₃ thin films, grown on p-Si(100) by atomic layer deposition (ALD), has been studied by utilizing XPS and reflection electron energy loss spectroscopy (REELS). Band gaps and valence band offsets were estimated from the onset of REELS and valence band spectra of XPS, respectively. Hf-Al-O thin film is found to have asymmetric barrier heights for electrons and holes and reveals an increasing trend in the conduction band offsets after annealing treatment, while Al₂O₃ film shows a nearly symmetric band offsets.

Original language	English
Pages (from-to)	502-505
Number of pages	4
Journal	Surface and Interface Analysis
Volume	38
Issue number	4
DOIs	https://doi.org/10.1002/sia.2203
Publication status	Published - 2006 Apr

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1002/sia.2203

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@article{0edf0c85bb1748be9fbd7b5acff12b72,

title = "Temperature dependence of band alignments in ultrathin Hf-A1-O and Al 2O3 films on p-Si (100)",

abstract = "Annealing temperature dependence of band alignments in Hf-Al-O and Al 2O3 thin films, grown on p-Si(100) by atomic layer deposition (ALD), has been studied by utilizing XPS and reflection electron energy loss spectroscopy (REELS). Band gaps and valence band offsets were estimated from the onset of REELS and valence band spectra of XPS, respectively. Hf-Al-O thin film is found to have asymmetric barrier heights for electrons and holes and reveals an increasing trend in the conduction band offsets after annealing treatment, while Al2O3 film shows a nearly symmetric band offsets.",

author = "H. Jin and Oh, {S. K.} and Kang, {H. J.} and Lee, {Y. S.} and Cho, {M. H.}",

year = "2006",

month = apr,

doi = "10.1002/sia.2203",

language = "English",

volume = "38",

pages = "502--505",

journal = "Surface and Interface Analysis",

issn = "0142-2421",

publisher = "John Wiley and Sons Ltd",

number = "4",

}

TY - JOUR

T1 - Temperature dependence of band alignments in ultrathin Hf-A1-O and Al 2O3 films on p-Si (100)

AU - Jin, H.

AU - Oh, S. K.

AU - Kang, H. J.

AU - Lee, Y. S.

AU - Cho, M. H.

PY - 2006/4

Y1 - 2006/4

N2 - Annealing temperature dependence of band alignments in Hf-Al-O and Al 2O3 thin films, grown on p-Si(100) by atomic layer deposition (ALD), has been studied by utilizing XPS and reflection electron energy loss spectroscopy (REELS). Band gaps and valence band offsets were estimated from the onset of REELS and valence band spectra of XPS, respectively. Hf-Al-O thin film is found to have asymmetric barrier heights for electrons and holes and reveals an increasing trend in the conduction band offsets after annealing treatment, while Al2O3 film shows a nearly symmetric band offsets.

AB - Annealing temperature dependence of band alignments in Hf-Al-O and Al 2O3 thin films, grown on p-Si(100) by atomic layer deposition (ALD), has been studied by utilizing XPS and reflection electron energy loss spectroscopy (REELS). Band gaps and valence band offsets were estimated from the onset of REELS and valence band spectra of XPS, respectively. Hf-Al-O thin film is found to have asymmetric barrier heights for electrons and holes and reveals an increasing trend in the conduction band offsets after annealing treatment, while Al2O3 film shows a nearly symmetric band offsets.

UR - http://www.scopus.com/inward/record.url?scp=33646594752&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646594752&partnerID=8YFLogxK

U2 - 10.1002/sia.2203

DO - 10.1002/sia.2203

M3 - Article

AN - SCOPUS:33646594752

SN - 0142-2421

VL - 38

SP - 502

EP - 505

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

IS - 4

ER -

Temperature dependence of band alignments in ultrathin Hf-A1-O and Al ₂O₃ films on p-Si (100)

Abstract

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