Abstract
The photoluminescence linewidths and excition lifetimes of free excitons in GaAs/AlGaAs multiple quantum wells were systematically investigated as a function of temperature, quantum well width, and carrier density. The experimental results showed that the exciton decay processes were strongly related to the linewidth of the exciton and the exciton binding energy.
Original language | English |
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Pages (from-to) | 387-393 |
Number of pages | 7 |
Journal | Optical and Quantum Electronics |
Volume | 27 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1995 May |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering