TEM study on volume changes and void formation in Ge2Sb 2Te5 films, with repeated phase changes

Kihoon Do; Dokyu Lee; Dae Hong Ko; Hyunchul Sohn; Mann Ho Cho

doi:10.1149/1.3439647

TEM study on volume changes and void formation in Ge₂Sb ₂Te₅ films, with repeated phase changes

Kihoon Do, Dokyu Lee, Dae Hong Ko, Hyunchul Sohn, Mann Ho Cho

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

Changes in volume in Ge₂Sb₂Te₅ (GST) films due to the density change during phase transformations between amorphous and crystallized states and consequent void formations were examined. Transmission electron microscopy (TEM) was used to measure changes in volume during laser-induced crystallization for both as-deposited and melt-quenched GST amorphous films, and changes in density were estimated. We found the formation of voids and their coalescence during repeated heat cycling by laser. A variation in chemical composition around the voids was confirmed using energy-dispersive spectroscopy analysis. The void formation and compositional changes can lead to degradation of reliability in phase-change random access memory devices.

Original language	English
Pages (from-to)	H284-H286
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	8
DOIs	https://doi.org/10.1149/1.3439647
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3439647

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abstract = "Changes in volume in Ge2Sb2Te5 (GST) films due to the density change during phase transformations between amorphous and crystallized states and consequent void formations were examined. Transmission electron microscopy (TEM) was used to measure changes in volume during laser-induced crystallization for both as-deposited and melt-quenched GST amorphous films, and changes in density were estimated. We found the formation of voids and their coalescence during repeated heat cycling by laser. A variation in chemical composition around the voids was confirmed using energy-dispersive spectroscopy analysis. The void formation and compositional changes can lead to degradation of reliability in phase-change random access memory devices.",

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T1 - TEM study on volume changes and void formation in Ge2Sb 2Te5 films, with repeated phase changes

AU - Do, Kihoon

AU - Lee, Dokyu

AU - Ko, Dae Hong

AU - Sohn, Hyunchul

AU - Cho, Mann Ho

PY - 2010

Y1 - 2010

N2 - Changes in volume in Ge2Sb2Te5 (GST) films due to the density change during phase transformations between amorphous and crystallized states and consequent void formations were examined. Transmission electron microscopy (TEM) was used to measure changes in volume during laser-induced crystallization for both as-deposited and melt-quenched GST amorphous films, and changes in density were estimated. We found the formation of voids and their coalescence during repeated heat cycling by laser. A variation in chemical composition around the voids was confirmed using energy-dispersive spectroscopy analysis. The void formation and compositional changes can lead to degradation of reliability in phase-change random access memory devices.

AB - Changes in volume in Ge2Sb2Te5 (GST) films due to the density change during phase transformations between amorphous and crystallized states and consequent void formations were examined. Transmission electron microscopy (TEM) was used to measure changes in volume during laser-induced crystallization for both as-deposited and melt-quenched GST amorphous films, and changes in density were estimated. We found the formation of voids and their coalescence during repeated heat cycling by laser. A variation in chemical composition around the voids was confirmed using energy-dispersive spectroscopy analysis. The void formation and compositional changes can lead to degradation of reliability in phase-change random access memory devices.

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TEM study on volume changes and void formation in Ge₂Sb ₂Te₅ films, with repeated phase changes

Abstract

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