TEM and in situ HREM for studying metal-semiconductor interfacial reactions

R. Sinclair; T. J. Konno; D. Hong Ko

doi:10.4028/www.scientific.net/msf.155-156.111

TEM and in situ HREM for studying metal-semiconductor interfacial reactions

R. Sinclair, T. J. Konno, D. Hong Ko

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

We have studied the reactions at metal-semiconductor interfaces using high resolution transmission electron microscopy, including in situ observation, and differential scanning calorimetry. There is contrasting behavior depending on the affinity for interaction or segregation. For reactive systems, compound formation ultimately results, but this can be preceded by solid-state amorphization. For non-reactive systems, crystallization of the semiconductor is often achieved with nucleation and growth mediated by the metal phase. Examples are presented on Ti-Si, Pt-GaAs, Al-Si and Ag-Ge systems.

Original language	English
Pages (from-to)	111-120
Number of pages	10
Journal	Materials Science Forum
Volume	155-5
DOIs	https://doi.org/10.4028/www.scientific.net/msf.155-156.111
Publication status	Published - 1994
Event	Proceedings of the International Meeting on Reactive Phase Formation at Interfaces and Diffusion Processes - Aussois, Fr Duration: 1993 May 21 → 1993 May 28

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "TEM and in situ HREM for studying metal-semiconductor interfacial reactions",

abstract = "We have studied the reactions at metal-semiconductor interfaces using high resolution transmission electron microscopy, including in situ observation, and differential scanning calorimetry. There is contrasting behavior depending on the affinity for interaction or segregation. For reactive systems, compound formation ultimately results, but this can be preceded by solid-state amorphization. For non-reactive systems, crystallization of the semiconductor is often achieved with nucleation and growth mediated by the metal phase. Examples are presented on Ti-Si, Pt-GaAs, Al-Si and Ag-Ge systems.",

author = "R. Sinclair and Konno, {T. J.} and {Hong Ko}, D.",

year = "1994",

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language = "English",

volume = "155-5",

pages = "111--120",

journal = "Materials Science Forum",

issn = "0255-5476",

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note = "Proceedings of the International Meeting on Reactive Phase Formation at Interfaces and Diffusion Processes ; Conference date: 21-05-1993 Through 28-05-1993",

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TY - JOUR

T1 - TEM and in situ HREM for studying metal-semiconductor interfacial reactions

AU - Sinclair, R.

AU - Konno, T. J.

AU - Hong Ko, D.

PY - 1994

Y1 - 1994

N2 - We have studied the reactions at metal-semiconductor interfaces using high resolution transmission electron microscopy, including in situ observation, and differential scanning calorimetry. There is contrasting behavior depending on the affinity for interaction or segregation. For reactive systems, compound formation ultimately results, but this can be preceded by solid-state amorphization. For non-reactive systems, crystallization of the semiconductor is often achieved with nucleation and growth mediated by the metal phase. Examples are presented on Ti-Si, Pt-GaAs, Al-Si and Ag-Ge systems.

AB - We have studied the reactions at metal-semiconductor interfaces using high resolution transmission electron microscopy, including in situ observation, and differential scanning calorimetry. There is contrasting behavior depending on the affinity for interaction or segregation. For reactive systems, compound formation ultimately results, but this can be preceded by solid-state amorphization. For non-reactive systems, crystallization of the semiconductor is often achieved with nucleation and growth mediated by the metal phase. Examples are presented on Ti-Si, Pt-GaAs, Al-Si and Ag-Ge systems.

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DO - 10.4028/www.scientific.net/msf.155-156.111

M3 - Conference article

AN - SCOPUS:0028666386

SN - 0255-5476

VL - 155-5

SP - 111

EP - 120

JO - Materials Science Forum

JF - Materials Science Forum

T2 - Proceedings of the International Meeting on Reactive Phase Formation at Interfaces and Diffusion Processes

Y2 - 21 May 1993 through 28 May 1993

ER -

TEM and in situ HREM for studying metal-semiconductor interfacial reactions

Abstract

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