Te Monolayer-Driven Spontaneous van der Waals Epitaxy of Two-dimensional Pnictogen Chalcogenide Film on Sapphire

Jae Yeol Hwang; Young Min Kim; Kyu Hyoung Lee; Hiromichi Ohta; Sung Wng Kim

doi:10.1021/acs.nanolett.7b02737

Te Monolayer-Driven Spontaneous van der Waals Epitaxy of Two-dimensional Pnictogen Chalcogenide Film on Sapphire

Jae Yeol Hwang, Young Min Kim, Kyu Hyoung Lee, Hiromichi Ohta, Sung Wng Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Demands on high-quality layer structured two-dimensional (2D) thin films such as pnictogen chalcogenides and transition metal dichalcogenides are growing due to the findings of exotic physical properties and potentials for device applications. However, the difficulties in controlling epitaxial growth and the unclear understanding of van der Waals epitaxy (vdWE) for a 2D chalcogenide film on a three-dimensional (3D) substrate have been major obstacles for the further advances of 2D materials. Here, we exploit the spontaneous vdWE of a high-quality 2D chalcogenide (Bi_0.5Sb_1.5Te₃) film by the chalcogen-driven surface reconstruction of a conventional 3D sapphire substrate. It is verified that the in situ formation of a pseudomorphic Te atomic monolayer on the surface of sapphire, which results in a dangling bond-free surface, allows the spontaneous vdWE of 2D chalcogenide film. Since this route uses the natural surface reconstruction of sapphire with chalcogen under vacuum condition, it can be scalable and easily utilized for the developments of various 2D chalcogenide vdWE films through conventional thin-film fabrication technologies.

Original language	English
Pages (from-to)	6140-6145
Number of pages	6
Journal	Nano letters
Volume	17
Issue number	10
DOIs	https://doi.org/10.1021/acs.nanolett.7b02737
Publication status	Published - 2017 Oct 11

Bibliographical note

Funding Information:
J.-Y.H. was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2017R1A6A3A11032364). Y.-M.K. was supported by the Institute for Basic Science (IBS-R011-D1). This research was supported by the National Research Foundation of Korea Grant funded by the Korean Government (MSIP) (NRF-2015R1A5A1036133) and by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (NRF-2015M3D1A1070639).

Publisher Copyright:
© 2017 American Chemical Society.

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

Access to Document

10.1021/acs.nanolett.7b02737

Cite this

@article{0f4306ec7ea243bfa468b23f45054746,

title = "Te Monolayer-Driven Spontaneous van der Waals Epitaxy of Two-dimensional Pnictogen Chalcogenide Film on Sapphire",

abstract = "Demands on high-quality layer structured two-dimensional (2D) thin films such as pnictogen chalcogenides and transition metal dichalcogenides are growing due to the findings of exotic physical properties and potentials for device applications. However, the difficulties in controlling epitaxial growth and the unclear understanding of van der Waals epitaxy (vdWE) for a 2D chalcogenide film on a three-dimensional (3D) substrate have been major obstacles for the further advances of 2D materials. Here, we exploit the spontaneous vdWE of a high-quality 2D chalcogenide (Bi0.5Sb1.5Te3) film by the chalcogen-driven surface reconstruction of a conventional 3D sapphire substrate. It is verified that the in situ formation of a pseudomorphic Te atomic monolayer on the surface of sapphire, which results in a dangling bond-free surface, allows the spontaneous vdWE of 2D chalcogenide film. Since this route uses the natural surface reconstruction of sapphire with chalcogen under vacuum condition, it can be scalable and easily utilized for the developments of various 2D chalcogenide vdWE films through conventional thin-film fabrication technologies.",

author = "Hwang, {Jae Yeol} and Kim, {Young Min} and Lee, {Kyu Hyoung} and Hiromichi Ohta and Kim, {Sung Wng}",

note = "Funding Information: J.-Y.H. was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2017R1A6A3A11032364). Y.-M.K. was supported by the Institute for Basic Science (IBS-R011-D1). This research was supported by the National Research Foundation of Korea Grant funded by the Korean Government (MSIP) (NRF-2015R1A5A1036133) and by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (NRF-2015M3D1A1070639). Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

year = "2017",

month = oct,

day = "11",

doi = "10.1021/acs.nanolett.7b02737",

language = "English",

volume = "17",

pages = "6140--6145",

journal = "Nano letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "10",

}

TY - JOUR

T1 - Te Monolayer-Driven Spontaneous van der Waals Epitaxy of Two-dimensional Pnictogen Chalcogenide Film on Sapphire

AU - Hwang, Jae Yeol

AU - Kim, Young Min

AU - Lee, Kyu Hyoung

AU - Ohta, Hiromichi

AU - Kim, Sung Wng

N1 - Funding Information: J.-Y.H. was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2017R1A6A3A11032364). Y.-M.K. was supported by the Institute for Basic Science (IBS-R011-D1). This research was supported by the National Research Foundation of Korea Grant funded by the Korean Government (MSIP) (NRF-2015R1A5A1036133) and by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (NRF-2015M3D1A1070639). Publisher Copyright: © 2017 American Chemical Society.

PY - 2017/10/11

Y1 - 2017/10/11

N2 - Demands on high-quality layer structured two-dimensional (2D) thin films such as pnictogen chalcogenides and transition metal dichalcogenides are growing due to the findings of exotic physical properties and potentials for device applications. However, the difficulties in controlling epitaxial growth and the unclear understanding of van der Waals epitaxy (vdWE) for a 2D chalcogenide film on a three-dimensional (3D) substrate have been major obstacles for the further advances of 2D materials. Here, we exploit the spontaneous vdWE of a high-quality 2D chalcogenide (Bi0.5Sb1.5Te3) film by the chalcogen-driven surface reconstruction of a conventional 3D sapphire substrate. It is verified that the in situ formation of a pseudomorphic Te atomic monolayer on the surface of sapphire, which results in a dangling bond-free surface, allows the spontaneous vdWE of 2D chalcogenide film. Since this route uses the natural surface reconstruction of sapphire with chalcogen under vacuum condition, it can be scalable and easily utilized for the developments of various 2D chalcogenide vdWE films through conventional thin-film fabrication technologies.

AB - Demands on high-quality layer structured two-dimensional (2D) thin films such as pnictogen chalcogenides and transition metal dichalcogenides are growing due to the findings of exotic physical properties and potentials for device applications. However, the difficulties in controlling epitaxial growth and the unclear understanding of van der Waals epitaxy (vdWE) for a 2D chalcogenide film on a three-dimensional (3D) substrate have been major obstacles for the further advances of 2D materials. Here, we exploit the spontaneous vdWE of a high-quality 2D chalcogenide (Bi0.5Sb1.5Te3) film by the chalcogen-driven surface reconstruction of a conventional 3D sapphire substrate. It is verified that the in situ formation of a pseudomorphic Te atomic monolayer on the surface of sapphire, which results in a dangling bond-free surface, allows the spontaneous vdWE of 2D chalcogenide film. Since this route uses the natural surface reconstruction of sapphire with chalcogen under vacuum condition, it can be scalable and easily utilized for the developments of various 2D chalcogenide vdWE films through conventional thin-film fabrication technologies.

UR - http://www.scopus.com/inward/record.url?scp=85031294525&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85031294525&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.7b02737

DO - 10.1021/acs.nanolett.7b02737

M3 - Article

C2 - 28902517

AN - SCOPUS:85031294525

SN - 1530-6984

VL - 17

SP - 6140

EP - 6145

JO - Nano letters

JF - Nano letters

IS - 10

ER -

Te Monolayer-Driven Spontaneous van der Waals Epitaxy of Two-dimensional Pnictogen Chalcogenide Film on Sapphire

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this