Tb/Ni/TiN Stack for Ultralow Contact Resistive Ni-Tb-InGaAs Alloy to n-In0.53Ga0.47As Layer

Meng Li; Jeongchan Lee; Jungwoo Oh; Hi Deok Lee

doi:10.1002/pssr.201800131

Tb/Ni/TiN Stack for Ultralow Contact Resistive Ni-Tb-InGaAs Alloy to n-In_0.53Ga_0.47As Layer

Meng Li, Jeongchan Lee, Jungwoo Oh, Hi Deok Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

This paper presents a Tb/Ni/TiN stack that can act as a metallic contact for n-In_0.53Ga_0.47As layer with lower specific contact resistivity. Tb/Ni/TiN layers are deposited sequentially on n-In_0.53Ga_0.47As via sputtering and Ni(Tb)-InGaAs alloy is formed using rapid thermal annealing. The ultralow specific contact resistivity (ρ_c) of 7.98 × 10⁻⁹ Ω cm² is obtained between Ni(Tb)-InGaAs and n-In_0.53Ga_0.47As layers, which is more than two orders of magnitude lower than that of a control sample with a Ni/TiN stack. The increased dopant concentration in the Ni-InGaAs alloy and the lowered barrier height between Ni-InGaAs and n-In_0.53Ga_0.47As are considered to be possible reasons for the improved contact resistance. The Tb/Ni/TiN stack is promising as a metallic contact for metal-oxide-semiconductor field-effect transistors (MOSFETs) based on n-In_0.53Ga_0.47As layer.

Original language	English
Article number	1800131
Journal	Physica Status Solidi - Rapid Research Letters
Volume	12
Issue number	7
DOIs	https://doi.org/10.1002/pssr.201800131
Publication status	Published - 2018 Jul

Bibliographical note

Funding Information:
This research was supported by the Ministry of Trade, Industry, and Energy (MOTIE; 10048536) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. The authors thank the Daegu Centers of the Korea Basic Science Institute (KBSI) for the XRD analysis and the National NanoFab Center in Daejeon for the SIMS analysis.

Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

Access to Document

10.1002/pssr.201800131

Cite this

@article{f6531dc9c2574a12828180fda8254baf,

title = "Tb/Ni/TiN Stack for Ultralow Contact Resistive Ni-Tb-InGaAs Alloy to n-In0.53Ga0.47As Layer",

abstract = "This paper presents a Tb/Ni/TiN stack that can act as a metallic contact for n-In0.53Ga0.47As layer with lower specific contact resistivity. Tb/Ni/TiN layers are deposited sequentially on n-In0.53Ga0.47As via sputtering and Ni(Tb)-InGaAs alloy is formed using rapid thermal annealing. The ultralow specific contact resistivity (ρc) of 7.98 × 10−9 Ω cm2 is obtained between Ni(Tb)-InGaAs and n-In0.53Ga0.47As layers, which is more than two orders of magnitude lower than that of a control sample with a Ni/TiN stack. The increased dopant concentration in the Ni-InGaAs alloy and the lowered barrier height between Ni-InGaAs and n-In0.53Ga0.47As are considered to be possible reasons for the improved contact resistance. The Tb/Ni/TiN stack is promising as a metallic contact for metal-oxide-semiconductor field-effect transistors (MOSFETs) based on n-In0.53Ga0.47As layer.",

author = "Meng Li and Jeongchan Lee and Jungwoo Oh and Lee, {Hi Deok}",

note = "Funding Information: This research was supported by the Ministry of Trade, Industry, and Energy (MOTIE; 10048536) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. The authors thank the Daegu Centers of the Korea Basic Science Institute (KBSI) for the XRD analysis and the National NanoFab Center in Daejeon for the SIMS analysis. Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2018",

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AU - Lee, Jeongchan

AU - Oh, Jungwoo

AU - Lee, Hi Deok

N1 - Funding Information: This research was supported by the Ministry of Trade, Industry, and Energy (MOTIE; 10048536) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. The authors thank the Daegu Centers of the Korea Basic Science Institute (KBSI) for the XRD analysis and the National NanoFab Center in Daejeon for the SIMS analysis. Publisher Copyright: © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2018/7

Y1 - 2018/7

N2 - This paper presents a Tb/Ni/TiN stack that can act as a metallic contact for n-In0.53Ga0.47As layer with lower specific contact resistivity. Tb/Ni/TiN layers are deposited sequentially on n-In0.53Ga0.47As via sputtering and Ni(Tb)-InGaAs alloy is formed using rapid thermal annealing. The ultralow specific contact resistivity (ρc) of 7.98 × 10−9 Ω cm2 is obtained between Ni(Tb)-InGaAs and n-In0.53Ga0.47As layers, which is more than two orders of magnitude lower than that of a control sample with a Ni/TiN stack. The increased dopant concentration in the Ni-InGaAs alloy and the lowered barrier height between Ni-InGaAs and n-In0.53Ga0.47As are considered to be possible reasons for the improved contact resistance. The Tb/Ni/TiN stack is promising as a metallic contact for metal-oxide-semiconductor field-effect transistors (MOSFETs) based on n-In0.53Ga0.47As layer.

AB - This paper presents a Tb/Ni/TiN stack that can act as a metallic contact for n-In0.53Ga0.47As layer with lower specific contact resistivity. Tb/Ni/TiN layers are deposited sequentially on n-In0.53Ga0.47As via sputtering and Ni(Tb)-InGaAs alloy is formed using rapid thermal annealing. The ultralow specific contact resistivity (ρc) of 7.98 × 10−9 Ω cm2 is obtained between Ni(Tb)-InGaAs and n-In0.53Ga0.47As layers, which is more than two orders of magnitude lower than that of a control sample with a Ni/TiN stack. The increased dopant concentration in the Ni-InGaAs alloy and the lowered barrier height between Ni-InGaAs and n-In0.53Ga0.47As are considered to be possible reasons for the improved contact resistance. The Tb/Ni/TiN stack is promising as a metallic contact for metal-oxide-semiconductor field-effect transistors (MOSFETs) based on n-In0.53Ga0.47As layer.

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