Tantalum capping on platinum thin heater for selective area heating

Woong Hee Jeong, Do Kyung Kim, Choong Hee Lee, Tae Hoon Jeong, Tae Hyung Hwang, Hyun Jae Kim

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The thermal radiation which generated from the patterned Ta/Pt/Ta thin heater achieved a high temperature up to 1010 °C under applied current of 2.4 A. In order to reduce an electromigration at high current of 2 A, a Ta capping layer was placed on the Pt layer instead of conventional capping layer, such as SiNx and CoWP. Under the thermal radiation at the applied current of 2 A in the Ta/Pt/Ta thin heater, the Ta capping layer enhanced the lifetime of the Pt thin heater up to 5 h. A stamping process for the crystallization of a-Si was performed for 40 samples using the Ta/Pt/Ta thin heater. For all samples, a-Si has been selectively crystallized and Raman peaks were located near 519 cm- 1. These results indicated that the thermal radiation of the Ta/Pt/Ta thin heater was maintained constantly due to the Ta capping.

Original languageEnglish
Pages (from-to)4127-4130
Number of pages4
JournalThin Solid Films
Issue number14
Publication statusPublished - 2009 May 29

Bibliographical note

Funding Information:
This work was supported in part by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2006-311-2006-8-1450). This work was also supported by the LCD Business Unit of Samsung Electronics.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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