Tailored Self-Assembled Monolayer using Chemical Coupling for Indium-Gallium-Zinc Oxide Thin-Film Transistors: Multifunctional Copper Diffusion Barrier

Seungmin Lee, Sanghyeon Lee, Minkyu Lee, Sung Min Rho, Hyung Tae Kim, Chihyeong Won, Kukro Yoon, Chaebeen Kwon, Juyoung Kim, Geun Chul Park, Jun Hyung Lim, Joon Seok Park, Woobin Kwon, Young Bae Park, Dong Won Chun, Hyun Jae Kim, Taeyoon Lee

Research output: Contribution to journalArticlepeer-review

Abstract

Controlling the contact properties of a copper (Cu) electrode is an important process for improving the performance of an amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) for high-speed applications, owing to the low resistance-capacitance product constant of Cu. One of the many challenges in Cu application to a-IGZO is inhibiting high diffusivity, which causes degradation in the performance of a-IGZO TFT by forming electron trap states. A self-assembled monolayer (SAM) can perfectly act as a Cu diffusion barrier (DB) and passivation layer that prevents moisture and oxygen, which can deteriorate the TFT on-off performance. However, traditional SAM materials have high contact resistance and low mechanical-adhesion properties. In this study, we demonstrate that tailoring the SAM using the chemical coupling method can enhance the electrical and mechanical properties of a-IGZO TFTs. The doping effects from the dipole moment of the tailored SAMs enhance the electrical properties of a-IGZO TFTs, resulting in a field-effect mobility of 13.87 cm2/V·s, an on-off ratio above 107, and a low contact resistance of 612 ω. Because of the high electrical performance of tailored SAMs, they function as a Cu DB and a passivation layer. Moreover, a selectively tailored functional group can improve the adhesion properties between Cu and a-IGZO. These multifunctionally tailored SAMs can be a promising candidate for a very thin Cu DB in future electronic technology.

Original languageEnglish
Pages (from-to)56310-56320
Number of pages11
JournalACS Applied Materials and Interfaces
Volume14
Issue number50
DOIs
Publication statusPublished - 2022 Dec 21

Bibliographical note

Publisher Copyright:
© 2022 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • General Materials Science

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