Synthesis of V-doped SiC powder for growth of semi-insulating SiC crystals

Eunjin Jung, Younghee Kim, Yong Jin Kwon, Chae Young Lee, Myung Hyun Lee, Won Jae Lee, Doo Jin Choi, Seong Min Jeong

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


V-doped semi-insulating (VDSI) SiC crystal is a promising substrate for high-frequency electronic devices achieved using GaN epitaxial films. However, V doping in a SiC crystal is difficult to control owing to the different sublimation temperatures of VC and SiC. The amount of V changes depending on the growth sequence, which has been a significant concern in VDSI SiC substrates in terms of wafer reliability. In this study, therefore, we aimed to synthesize a single source by vaporizing Si, C, and V under the same conditions to improve the doping issue in VDSI SiC. We synthesized V-doped SiC powder as the starting material for VDSI SiC substrate based on thermodynamic modeling, and the synthesized powder was used to grow a VDSI SiC crystal via physical vapor transport. Finally, considering the homogeneous V concentration in the grown crystal, the synthesized V-doped SiC was observed to be effective to grow VDSI SiC independent of the growth sequence.

Original languageEnglish
Pages (from-to)22632-22637
Number of pages6
JournalCeramics International
Issue number18
Publication statusPublished - 2018 Dec 15

Bibliographical note

Publisher Copyright:
© 2018 Elsevier Ltd and Techna Group S.r.l.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry


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