Synthesis of two-dimensional MoS2/graphene heterostructure by atomic layer deposition using MoF6 precursor

Youngjun Kim; Daeguen Choi; Whang Je Woo; Jae Bok Lee; Gyeong Hee Ryu; Jun Hyung Lim; Sunhee Lee; Zonghoon Lee; Seongil Im; Jong Hyun Ahn; Woo Hee Kim; Jusang Park; Hyungjun Kim

doi:10.1016/j.apsusc.2019.07.168

Synthesis of two-dimensional MoS₂/graphene heterostructure by atomic layer deposition using MoF₆ precursor

Youngjun Kim, Daeguen Choi, Whang Je Woo, Jae Bok Lee, Gyeong Hee Ryu, Jun Hyung Lim, Sunhee Lee, Zonghoon Lee, Seongil Im, Jong Hyun Ahn, Woo Hee Kim, Jusang Park, Hyungjun Kim

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The effective synthesis of two-dimensional (2D) heterostructures is essential for their use in electronic devices. In this study, by using atomic layer deposition (ALD), 2D transition metal dichalcogenide (TMD) heterostructures were grown by a halide precursor. This study shows the growth characteristics of the fluoride precursor compared to the chloride precursor used for the synthesis of the TMD on the graphene layer and the other TMD layer. Additionally, a carbonyl precursor was used for comparison with the halide precursor in terms of the thermal stability. From these experiments, the fluoride precursor was adequate for synthesizing on the graphene, however, was inappropriate for the TMD/TMD heterostructure because of its etching characteristic. Meanwhile, the chloride precursor was appropriate for the TMD/TMD heterostructure, even for a low binding energy with the substrate, but was inadequate in forming the TMD/graphene heterostructure, even if the ALD cycle increased. Through our experiments, we show, for the first time, that there exists a suitable halide precursor for a 2D layer for a substrate.

Original language	English
Pages (from-to)	591-599
Number of pages	9
Journal	Applied Surface Science
Volume	494
DOIs	https://doi.org/10.1016/j.apsusc.2019.07.168
Publication status	Published - 2019 Nov 15

Bibliographical note

Funding Information:
This work was supported by the Materials and Components Technology Development Program of MOTIE / KEIT . [10080527, Development of commercialization technology of highly sensitive gas sensor based on chalcogenide 2D nanomaterial], by the Commercialization Promotion Agency for R&D Outcomes(COMPA) funded by the Ministry of Science and ICT (MSIT). [Development of Plasma-based Synthesis Equipment and Process for Two-Dimensional TMDCs], by Samsung Display CO., LTD., and by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( NRF-2015R1D1A1A01060064 ), under the framework of international cooperation program managed by the National Research Foundation of Korea ( NRF-2018K2A9A1A01090484 ), by the research fund of Hanyang University ( HY-2019-N ) and thanks to Air Liquide for providing the MoF 6 precursor.

Publisher Copyright:
© 2019

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2019.07.168

Cite this

@article{9d3ae0a354714f4882cfe0a4124aff09,

title = "Synthesis of two-dimensional MoS2/graphene heterostructure by atomic layer deposition using MoF6 precursor",

abstract = "The effective synthesis of two-dimensional (2D) heterostructures is essential for their use in electronic devices. In this study, by using atomic layer deposition (ALD), 2D transition metal dichalcogenide (TMD) heterostructures were grown by a halide precursor. This study shows the growth characteristics of the fluoride precursor compared to the chloride precursor used for the synthesis of the TMD on the graphene layer and the other TMD layer. Additionally, a carbonyl precursor was used for comparison with the halide precursor in terms of the thermal stability. From these experiments, the fluoride precursor was adequate for synthesizing on the graphene, however, was inappropriate for the TMD/TMD heterostructure because of its etching characteristic. Meanwhile, the chloride precursor was appropriate for the TMD/TMD heterostructure, even for a low binding energy with the substrate, but was inadequate in forming the TMD/graphene heterostructure, even if the ALD cycle increased. Through our experiments, we show, for the first time, that there exists a suitable halide precursor for a 2D layer for a substrate.",

author = "Youngjun Kim and Daeguen Choi and Woo, {Whang Je} and Lee, {Jae Bok} and Ryu, {Gyeong Hee} and Lim, {Jun Hyung} and Sunhee Lee and Zonghoon Lee and Seongil Im and Ahn, {Jong Hyun} and Kim, {Woo Hee} and Jusang Park and Hyungjun Kim",

note = "Funding Information: This work was supported by the Materials and Components Technology Development Program of MOTIE / KEIT . [10080527, Development of commercialization technology of highly sensitive gas sensor based on chalcogenide 2D nanomaterial], by the Commercialization Promotion Agency for R&D Outcomes(COMPA) funded by the Ministry of Science and ICT (MSIT). [Development of Plasma-based Synthesis Equipment and Process for Two-Dimensional TMDCs], by Samsung Display CO., LTD., and by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( NRF-2015R1D1A1A01060064 ), under the framework of international cooperation program managed by the National Research Foundation of Korea ( NRF-2018K2A9A1A01090484 ), by the research fund of Hanyang University ( HY-2019-N ) and thanks to Air Liquide for providing the MoF 6 precursor. Publisher Copyright: {\textcopyright} 2019",

year = "2019",

month = nov,

day = "15",

doi = "10.1016/j.apsusc.2019.07.168",

language = "English",

volume = "494",

pages = "591--599",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Synthesis of two-dimensional MoS2/graphene heterostructure by atomic layer deposition using MoF6 precursor

AU - Kim, Youngjun

AU - Choi, Daeguen

AU - Woo, Whang Je

AU - Lee, Jae Bok

AU - Ryu, Gyeong Hee

AU - Lim, Jun Hyung

AU - Lee, Sunhee

AU - Lee, Zonghoon

AU - Im, Seongil

AU - Ahn, Jong Hyun

AU - Kim, Woo Hee

AU - Park, Jusang

AU - Kim, Hyungjun

N1 - Funding Information: This work was supported by the Materials and Components Technology Development Program of MOTIE / KEIT . [10080527, Development of commercialization technology of highly sensitive gas sensor based on chalcogenide 2D nanomaterial], by the Commercialization Promotion Agency for R&D Outcomes(COMPA) funded by the Ministry of Science and ICT (MSIT). [Development of Plasma-based Synthesis Equipment and Process for Two-Dimensional TMDCs], by Samsung Display CO., LTD., and by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( NRF-2015R1D1A1A01060064 ), under the framework of international cooperation program managed by the National Research Foundation of Korea ( NRF-2018K2A9A1A01090484 ), by the research fund of Hanyang University ( HY-2019-N ) and thanks to Air Liquide for providing the MoF 6 precursor. Publisher Copyright: © 2019

PY - 2019/11/15

Y1 - 2019/11/15

N2 - The effective synthesis of two-dimensional (2D) heterostructures is essential for their use in electronic devices. In this study, by using atomic layer deposition (ALD), 2D transition metal dichalcogenide (TMD) heterostructures were grown by a halide precursor. This study shows the growth characteristics of the fluoride precursor compared to the chloride precursor used for the synthesis of the TMD on the graphene layer and the other TMD layer. Additionally, a carbonyl precursor was used for comparison with the halide precursor in terms of the thermal stability. From these experiments, the fluoride precursor was adequate for synthesizing on the graphene, however, was inappropriate for the TMD/TMD heterostructure because of its etching characteristic. Meanwhile, the chloride precursor was appropriate for the TMD/TMD heterostructure, even for a low binding energy with the substrate, but was inadequate in forming the TMD/graphene heterostructure, even if the ALD cycle increased. Through our experiments, we show, for the first time, that there exists a suitable halide precursor for a 2D layer for a substrate.

AB - The effective synthesis of two-dimensional (2D) heterostructures is essential for their use in electronic devices. In this study, by using atomic layer deposition (ALD), 2D transition metal dichalcogenide (TMD) heterostructures were grown by a halide precursor. This study shows the growth characteristics of the fluoride precursor compared to the chloride precursor used for the synthesis of the TMD on the graphene layer and the other TMD layer. Additionally, a carbonyl precursor was used for comparison with the halide precursor in terms of the thermal stability. From these experiments, the fluoride precursor was adequate for synthesizing on the graphene, however, was inappropriate for the TMD/TMD heterostructure because of its etching characteristic. Meanwhile, the chloride precursor was appropriate for the TMD/TMD heterostructure, even for a low binding energy with the substrate, but was inadequate in forming the TMD/graphene heterostructure, even if the ALD cycle increased. Through our experiments, we show, for the first time, that there exists a suitable halide precursor for a 2D layer for a substrate.

UR - http://www.scopus.com/inward/record.url?scp=85069815437&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85069815437&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2019.07.168

DO - 10.1016/j.apsusc.2019.07.168

M3 - Article

AN - SCOPUS:85069815437

SN - 0169-4332

VL - 494

SP - 591

EP - 599

JO - Applied Surface Science

JF - Applied Surface Science

ER -