Synthesis of low-k porous silica films via freeze drying

S. H. Hyun; T. Y. Kim; G. S. Kim; H. H. Park

doi:10.1023/A:1006775213914

Synthesis of low-k porous silica films via freeze drying

S. H. Hyun, T. Y. Kim, G. S. Kim, H. H. Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Low-k porous silica thin films were synthesized using the freeze drying technique. This new technique is simpler and inexpensive in comparison with the supercritical or ambient pressure drying technique. The film thickness was very sensitive to spin rpm and could be controlled in the range of 1100 nm-250 nm by adjusting rpm from 1000 to 7000. The average porosity and the dielectric constant of freeze-dried films were found to be approximately 60% (0.9 g/cm³).

Original language	English
Pages (from-to)	1863-1866
Number of pages	4
Journal	Journal of Materials Science Letters
Volume	19
Issue number	20
DOIs	https://doi.org/10.1023/A:1006775213914
Publication status	Published - 2000 Oct

Bibliographical note

Funding Information:
This work was supported in part by Samsung Electronics Co. under a ’99-contract.

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.1023/A:1006775213914

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author = "Hyun, {S. H.} and Kim, {T. Y.} and Kim, {G. S.} and Park, {H. H.}",

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AU - Kim, G. S.

AU - Park, H. H.

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N2 - Low-k porous silica thin films were synthesized using the freeze drying technique. This new technique is simpler and inexpensive in comparison with the supercritical or ambient pressure drying technique. The film thickness was very sensitive to spin rpm and could be controlled in the range of 1100 nm-250 nm by adjusting rpm from 1000 to 7000. The average porosity and the dielectric constant of freeze-dried films were found to be approximately 60% (0.9 g/cm3).

AB - Low-k porous silica thin films were synthesized using the freeze drying technique. This new technique is simpler and inexpensive in comparison with the supercritical or ambient pressure drying technique. The film thickness was very sensitive to spin rpm and could be controlled in the range of 1100 nm-250 nm by adjusting rpm from 1000 to 7000. The average porosity and the dielectric constant of freeze-dried films were found to be approximately 60% (0.9 g/cm3).

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Synthesis of low-k porous silica films via freeze drying

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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