Synthesis of arsenic-doped p-type ZnO films by addition of As 2O3 to the ZnO spin coating solution

Chanhyoung Park; Solbaro Kim; Sangwoo Lim

doi:10.1016/j.ssc.2013.05.012

Synthesis of arsenic-doped p-type ZnO films by addition of As ₂O₃ to the ZnO spin coating solution

Chanhyoung Park, Solbaro Kim, Sangwoo Lim

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Arsenic-doped ZnO films were prepared by adding As₂O₃ to sol-gel ZnO spin coating synthesis. The preferential (002) orientation improved, and the grain size of ZnO lattice increased with As-doping in ZnO films. UV transmittance over 70% with a blue shift was observed after As-doping. In particular, ZnO film with an As concentration of 6.7 at% showed a carrier concentration of 1.62 x 10¹⁹/cm³, mobility of 94.0 cm ²/Vs, and resistivity of 3.99 × 10^-3 Ω cm. It was suggested that formation of As-2V_Zn increased the carrier concentration and induced the blue shift, and the increase in grain size increased the mobility of p-type ZnO films.

Original language	English
Pages (from-to)	18-22
Number of pages	5
Journal	Solid State Communications
Volume	167
DOIs	https://doi.org/10.1016/j.ssc.2013.05.012
Publication status	Published - 2013

Bibliographical note

Funding Information:
This work was supported by a New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Government Ministry of Knowledge Economy ( 20113020010010 ). This work was also supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2009-0093823 ).

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/j.ssc.2013.05.012

Cite this

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title = "Synthesis of arsenic-doped p-type ZnO films by addition of As 2O3 to the ZnO spin coating solution",

abstract = "Arsenic-doped ZnO films were prepared by adding As2O3 to sol-gel ZnO spin coating synthesis. The preferential (002) orientation improved, and the grain size of ZnO lattice increased with As-doping in ZnO films. UV transmittance over 70% with a blue shift was observed after As-doping. In particular, ZnO film with an As concentration of 6.7 at% showed a carrier concentration of 1.62 x 1019/cm3, mobility of 94.0 cm 2/Vs, and resistivity of 3.99 × 10-3 Ω cm. It was suggested that formation of As-2VZn increased the carrier concentration and induced the blue shift, and the increase in grain size increased the mobility of p-type ZnO films.",

author = "Chanhyoung Park and Solbaro Kim and Sangwoo Lim",

note = "Funding Information: This work was supported by a New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Government Ministry of Knowledge Economy ( 20113020010010 ). This work was also supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2009-0093823 ).",

year = "2013",

doi = "10.1016/j.ssc.2013.05.012",

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T1 - Synthesis of arsenic-doped p-type ZnO films by addition of As 2O3 to the ZnO spin coating solution

AU - Park, Chanhyoung

AU - Kim, Solbaro

AU - Lim, Sangwoo

N1 - Funding Information: This work was supported by a New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Government Ministry of Knowledge Economy ( 20113020010010 ). This work was also supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2009-0093823 ).

PY - 2013

Y1 - 2013

N2 - Arsenic-doped ZnO films were prepared by adding As2O3 to sol-gel ZnO spin coating synthesis. The preferential (002) orientation improved, and the grain size of ZnO lattice increased with As-doping in ZnO films. UV transmittance over 70% with a blue shift was observed after As-doping. In particular, ZnO film with an As concentration of 6.7 at% showed a carrier concentration of 1.62 x 1019/cm3, mobility of 94.0 cm 2/Vs, and resistivity of 3.99 × 10-3 Ω cm. It was suggested that formation of As-2VZn increased the carrier concentration and induced the blue shift, and the increase in grain size increased the mobility of p-type ZnO films.

AB - Arsenic-doped ZnO films were prepared by adding As2O3 to sol-gel ZnO spin coating synthesis. The preferential (002) orientation improved, and the grain size of ZnO lattice increased with As-doping in ZnO films. UV transmittance over 70% with a blue shift was observed after As-doping. In particular, ZnO film with an As concentration of 6.7 at% showed a carrier concentration of 1.62 x 1019/cm3, mobility of 94.0 cm 2/Vs, and resistivity of 3.99 × 10-3 Ω cm. It was suggested that formation of As-2VZn increased the carrier concentration and induced the blue shift, and the increase in grain size increased the mobility of p-type ZnO films.

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