Synthesis of arsenic-doped p-type ZnO films by addition of As 2O3 to the ZnO spin coating solution

Chanhyoung Park, Solbaro Kim, Sangwoo Lim

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Arsenic-doped ZnO films were prepared by adding As2O3 to sol-gel ZnO spin coating synthesis. The preferential (002) orientation improved, and the grain size of ZnO lattice increased with As-doping in ZnO films. UV transmittance over 70% with a blue shift was observed after As-doping. In particular, ZnO film with an As concentration of 6.7 at% showed a carrier concentration of 1.62 x 1019/cm3, mobility of 94.0 cm 2/Vs, and resistivity of 3.99 × 10-3 Ω cm. It was suggested that formation of As-2VZn increased the carrier concentration and induced the blue shift, and the increase in grain size increased the mobility of p-type ZnO films.

Original languageEnglish
Pages (from-to)18-22
Number of pages5
JournalSolid State Communications
Publication statusPublished - 2013

Bibliographical note

Funding Information:
This work was supported by a New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Government Ministry of Knowledge Economy ( 20113020010010 ). This work was also supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2009-0093823 ).

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


Dive into the research topics of 'Synthesis of arsenic-doped p-type ZnO films by addition of As 2O3 to the ZnO spin coating solution'. Together they form a unique fingerprint.

Cite this