Synthesis and properties of triangular-shaped GaN nanorods via growth mode control

S. M. Kang, T. I. Shin, D. V. Dihn, J. H. Yang, S. W. Kim, D. H. Yoon

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The synthesis of wurtzite gallium nitride (GaN) nanorods with triangular shape on c-Al2O3 substrates using a thermal chemical vapor deposition process was investigated. It was possible to control nanorod shape and growth mode of GaN nanorods by change of sample geometry in the chamber using a mixture of GaN powder and Ga metal with ammonia gas reaction. It was found that the GaN nanorods were grown via both vapor-liquid-solid and vapor-solid mode with change of sample placement in the chamber. The morphology of the GaN nanorods was observed by field-emission scanning electron microscopy in secondary electron and back-scattered electron mode. High-resolution transmission electron microscopy, and X-ray scattering measurements revealed the GaN nanorods to have a single-crystalline wurtzite structure.

Original languageEnglish
Pages (from-to)490-494
Number of pages5
JournalJournal of Crystal Growth
Volume311
Issue number3
DOIs
Publication statusPublished - 2009 Jan 15

Bibliographical note

Funding Information:
The authors wish to thank the European Space Agency for supporting this work.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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