Synthesis and characterization of ferroelectric properties of Ce2Ti2O7 thin films with Ce3+ by chemical solution deposition

Woo Sik Kim; Jun Kyu Yang; Chang Ki Lee; Hong Sub Lee; Hyung Ho Park

doi:10.1016/j.tsf.2008.06.058

Synthesis and characterization of ferroelectric properties of Ce₂Ti₂O₇ thin films with Ce³⁺ by chemical solution deposition

Woo Sik Kim, Jun Kyu Yang, Chang Ki Lee, Hong Sub Lee, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Ferroelectric Ce₂Ti₂O₇ films were grown with a pseudo-pyrochlore structure on an Y₂O₃/Si substrate by low-vacuum (6.664 Pa) anneal at 800 °C using chemical solution deposition. Trivalent state of Ce could be confirmed by using X-ray absorption-near-edge-structure. The dielectric constant at 1 MHz and dielectric loss of the film in the Pt/Ce₂Ti₂O₇/Pt structure were measured as 48.7 and 0.013, respectively. A relatively large memory window of 1.24 V was measured with a Pt/Ce₂Ti₂O₇/Y₂O₃/Si capacitor structure at an applied voltage of 6 V. The capacitance-voltage hysteresis was symmetrical without shift from the origin due to an effective suppression of the interfacial SiO₂ formation under low-vacuum annealing conditions. The Ce₂Ti₂O₇ film was compatible for application to a ferroelectric gate.

Original language	English
Pages (from-to)	506-509
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	2
DOIs	https://doi.org/10.1016/j.tsf.2008.06.058
Publication status	Published - 2008 Nov 28

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant founded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-311-D00636). The experiments at the PLS were supported in part by the MOST and the POSTECH.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2008.06.058

Cite this

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title = "Synthesis and characterization of ferroelectric properties of Ce2Ti2O7 thin films with Ce3+ by chemical solution deposition",

abstract = "Ferroelectric Ce2Ti2O7 films were grown with a pseudo-pyrochlore structure on an Y2O3/Si substrate by low-vacuum (6.664 Pa) anneal at 800 °C using chemical solution deposition. Trivalent state of Ce could be confirmed by using X-ray absorption-near-edge-structure. The dielectric constant at 1 MHz and dielectric loss of the film in the Pt/Ce2Ti2O7/Pt structure were measured as 48.7 and 0.013, respectively. A relatively large memory window of 1.24 V was measured with a Pt/Ce2Ti2O7/Y2O3/Si capacitor structure at an applied voltage of 6 V. The capacitance-voltage hysteresis was symmetrical without shift from the origin due to an effective suppression of the interfacial SiO2 formation under low-vacuum annealing conditions. The Ce2Ti2O7 film was compatible for application to a ferroelectric gate.",

author = "Kim, {Woo Sik} and Yang, {Jun Kyu} and Lee, {Chang Ki} and Lee, {Hong Sub} and Park, {Hyung Ho}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant founded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-311-D00636). The experiments at the PLS were supported in part by the MOST and the POSTECH.",

year = "2008",

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doi = "10.1016/j.tsf.2008.06.058",

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AU - Yang, Jun Kyu

AU - Lee, Chang Ki

AU - Lee, Hong Sub

AU - Park, Hyung Ho

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant founded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-311-D00636). The experiments at the PLS were supported in part by the MOST and the POSTECH.

PY - 2008/11/28

Y1 - 2008/11/28

N2 - Ferroelectric Ce2Ti2O7 films were grown with a pseudo-pyrochlore structure on an Y2O3/Si substrate by low-vacuum (6.664 Pa) anneal at 800 °C using chemical solution deposition. Trivalent state of Ce could be confirmed by using X-ray absorption-near-edge-structure. The dielectric constant at 1 MHz and dielectric loss of the film in the Pt/Ce2Ti2O7/Pt structure were measured as 48.7 and 0.013, respectively. A relatively large memory window of 1.24 V was measured with a Pt/Ce2Ti2O7/Y2O3/Si capacitor structure at an applied voltage of 6 V. The capacitance-voltage hysteresis was symmetrical without shift from the origin due to an effective suppression of the interfacial SiO2 formation under low-vacuum annealing conditions. The Ce2Ti2O7 film was compatible for application to a ferroelectric gate.

AB - Ferroelectric Ce2Ti2O7 films were grown with a pseudo-pyrochlore structure on an Y2O3/Si substrate by low-vacuum (6.664 Pa) anneal at 800 °C using chemical solution deposition. Trivalent state of Ce could be confirmed by using X-ray absorption-near-edge-structure. The dielectric constant at 1 MHz and dielectric loss of the film in the Pt/Ce2Ti2O7/Pt structure were measured as 48.7 and 0.013, respectively. A relatively large memory window of 1.24 V was measured with a Pt/Ce2Ti2O7/Y2O3/Si capacitor structure at an applied voltage of 6 V. The capacitance-voltage hysteresis was symmetrical without shift from the origin due to an effective suppression of the interfacial SiO2 formation under low-vacuum annealing conditions. The Ce2Ti2O7 film was compatible for application to a ferroelectric gate.

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