Surface scaling evolution and dielectric properties of sputter-deposited low loss Mg2SiO4 thin films

Chan Su Han; Bhaskar Chandra Mohanty; Hong Rak Choi; Yong Soo Cho

doi:10.1016/j.surfcoat.2012.07.071

Surface scaling evolution and dielectric properties of sputter-deposited low loss Mg₂SiO₄ thin films

Chan Su Han, Bhaskar Chandra Mohanty, Hong Rak Choi, Yong Soo Cho

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The evolution of surface roughness and dielectric properties of sputter-deposited Mg₂SiO₄ thin films have been studied. Analysis of height-height correlation function and power spectrum densities of the atomic force microscope images revealed that the growth surface experiences a difference in short-range and global roughening, indicating an anomalous scaling (super-rough) behavior. The growth exponent β=0.9 suggests that the growth instability due to the shadowing far outweighs the effects of a high substrate temperature (700°C). The dielectric loss tangent showed a pronounced dependence on deposition time, while dielectric constant remained unchanged at the bulk value; the changes in the grain structure via the evolution of surface scaling are suggested as a contributing factor.

Original language	English
Pages (from-to)	229-233
Number of pages	5
Journal	Surface and Coatings Technology
Volume	231
DOIs	https://doi.org/10.1016/j.surfcoat.2012.07.071
Publication status	Published - 2013 Sept 25

Bibliographical note

Funding Information:
This work was supported by a grant from the Ministry of Knowledge Economy, Korea , specified by the Foundation R&D Program for Core Technology of Materials.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/j.surfcoat.2012.07.071

Cite this

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title = "Surface scaling evolution and dielectric properties of sputter-deposited low loss Mg2SiO4 thin films",

abstract = "The evolution of surface roughness and dielectric properties of sputter-deposited Mg2SiO4 thin films have been studied. Analysis of height-height correlation function and power spectrum densities of the atomic force microscope images revealed that the growth surface experiences a difference in short-range and global roughening, indicating an anomalous scaling (super-rough) behavior. The growth exponent β=0.9 suggests that the growth instability due to the shadowing far outweighs the effects of a high substrate temperature (700°C). The dielectric loss tangent showed a pronounced dependence on deposition time, while dielectric constant remained unchanged at the bulk value; the changes in the grain structure via the evolution of surface scaling are suggested as a contributing factor.",

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AU - Choi, Hong Rak

AU - Cho, Yong Soo

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