Surface micromachined solenoid on-Si and on-glass inductors for RF applications

Jun Bo Yoon, Bon Kee Kim, Chul Hi Han, Euisik Yoon, Choong Ki Kim

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119 Citations (Scopus)


RF performance of surface micromachined solenoid on-chip inductors fabricated on a standard silicon substrate (10 Ω· cm) has been investigated and the results are compared with the same inductors on glass. The solenoid inductor on Si with a 15-μm thick insulating layer achieves peak quality (Q-) factor of 16.7 at 2.4 GHz with inductance of 2.67 nH. This peak Q-factor is about two-thirds of that of the same inductor fabricated on glass. The highest performance has been obtained from the narrowest-pitched on-glass inductor, which shows inductance of 2.3 nH, peak Q-factor of 25.1 at 8.4 GHz, and spatial inductance density of 30 nH/mm2. Both on-Si and on-glass inductors have been modeled by lumped circuits, and the geometrical dependence of the inductance and Q-factor have been investigated as well.

Original languageEnglish
Pages (from-to)487-489
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
Publication statusPublished - 1999 Sept

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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