Abstract
RF performance of surface micromachined solenoid on-chip inductors fabricated on a standard silicon substrate (10 Ω· cm) has been investigated and the results are compared with the same inductors on glass. The solenoid inductor on Si with a 15-μm thick insulating layer achieves peak quality (Q-) factor of 16.7 at 2.4 GHz with inductance of 2.67 nH. This peak Q-factor is about two-thirds of that of the same inductor fabricated on glass. The highest performance has been obtained from the narrowest-pitched on-glass inductor, which shows inductance of 2.3 nH, peak Q-factor of 25.1 at 8.4 GHz, and spatial inductance density of 30 nH/mm2. Both on-Si and on-glass inductors have been modeled by lumped circuits, and the geometrical dependence of the inductance and Q-factor have been investigated as well.
| Original language | English |
|---|---|
| Pages (from-to) | 487-489 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 20 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1999 Sept |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering