Surface and interface studies of RF sputtered HfO2 thin films with working pressure and gas flow ratio

K. C. Das; S. P. Ghosh; N. Tripathy; G. Bose; A. Ashok; P. Pal; D. H. Kim; T. I. Lee; J. M. Myoung; J. P. Kar

doi:10.1007/s10854-015-3179-9

Surface and interface studies of RF sputtered HfO₂ thin films with working pressure and gas flow ratio

K. C. Das, S. P. Ghosh, N. Tripathy, G. Bose, A. Ashok, P. Pal, D. H. Kim, T. I. Lee, J. M. Myoung, J. P. Kar

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

In this work, hafnium oxide (HfO₂) thin films were deposited on p-type silicon substrate by radio frequency magnetron sputtering at various working pressure ranging from 4 × 10⁻³ to 1 × 10⁻² mbar and Ar/O₂ flow ratio from 1:4 to 4:1. The morphological and electrical properties of the sputtered films were investigated and a correlation between the surface and electrical properties of the HfO₂ films was established with the variation of sputtering parameters. The evolution of monoclinic structure of the hafnium oxide thin films was observed by XRD studies. The surface of the HfO₂ films became rough with the increase in grain size at the sputter pressure of 8 × 10⁻³ mbar and Ar/O₂ gas flow ratio of 1:4. The formation of HfO₂ bond was seen from FTIR spectra. The oxide charge density has a lower value for the sputter pressure of 8 × 10⁻³ mbar and Ar/O₂ gas flow ratio of 1:4 due to the evolution of larger grains. The interface charge density was found to be minimum at a sputter pressure of 8 × 10⁻³ mbar.

Original language	English
Pages (from-to)	6025-6031
Number of pages	7
Journal	Journal of Materials Science: Materials in Electronics
Volume	26
Issue number	8
DOIs	https://doi.org/10.1007/s10854-015-3179-9
Publication status	Published - 2015 Aug 23

Bibliographical note

Funding Information:
This work was supported by the DST, India sponsored Indo-Korea Project (INT/Korea/P-16/2013) and partly supported by SERB Project (SR/FTP/PS-099/2012). This work also supported by the International Research and Development Program of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (Grant number: 2012K1A3A1A19038371).

Publisher Copyright:
© 2015, Springer Science+Business Media New York.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1007/s10854-015-3179-9

Cite this

@article{2bb14336141846b4a11bfc6068850ec6,

title = "Surface and interface studies of RF sputtered HfO2 thin films with working pressure and gas flow ratio",

abstract = "In this work, hafnium oxide (HfO2) thin films were deposited on p-type silicon substrate by radio frequency magnetron sputtering at various working pressure ranging from 4 × 10−3 to 1 × 10−2 mbar and Ar/O2 flow ratio from 1:4 to 4:1. The morphological and electrical properties of the sputtered films were investigated and a correlation between the surface and electrical properties of the HfO2 films was established with the variation of sputtering parameters. The evolution of monoclinic structure of the hafnium oxide thin films was observed by XRD studies. The surface of the HfO2 films became rough with the increase in grain size at the sputter pressure of 8 × 10−3 mbar and Ar/O2 gas flow ratio of 1:4. The formation of HfO2 bond was seen from FTIR spectra. The oxide charge density has a lower value for the sputter pressure of 8 × 10−3 mbar and Ar/O2 gas flow ratio of 1:4 due to the evolution of larger grains. The interface charge density was found to be minimum at a sputter pressure of 8 × 10−3 mbar.",

author = "Das, {K. C.} and Ghosh, {S. P.} and N. Tripathy and G. Bose and A. Ashok and P. Pal and Kim, {D. H.} and Lee, {T. I.} and Myoung, {J. M.} and Kar, {J. P.}",

note = "Funding Information: This work was supported by the DST, India sponsored Indo-Korea Project (INT/Korea/P-16/2013) and partly supported by SERB Project (SR/FTP/PS-099/2012). This work also supported by the International Research and Development Program of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (Grant number: 2012K1A3A1A19038371). Publisher Copyright: {\textcopyright} 2015, Springer Science+Business Media New York.",

year = "2015",

month = aug,

day = "23",

doi = "10.1007/s10854-015-3179-9",

language = "English",

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T1 - Surface and interface studies of RF sputtered HfO2 thin films with working pressure and gas flow ratio

AU - Das, K. C.

AU - Ghosh, S. P.

AU - Tripathy, N.

AU - Bose, G.

AU - Ashok, A.

AU - Pal, P.

AU - Kim, D. H.

AU - Lee, T. I.

AU - Myoung, J. M.

AU - Kar, J. P.

N1 - Funding Information: This work was supported by the DST, India sponsored Indo-Korea Project (INT/Korea/P-16/2013) and partly supported by SERB Project (SR/FTP/PS-099/2012). This work also supported by the International Research and Development Program of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (Grant number: 2012K1A3A1A19038371). Publisher Copyright: © 2015, Springer Science+Business Media New York.

PY - 2015/8/23

Y1 - 2015/8/23

N2 - In this work, hafnium oxide (HfO2) thin films were deposited on p-type silicon substrate by radio frequency magnetron sputtering at various working pressure ranging from 4 × 10−3 to 1 × 10−2 mbar and Ar/O2 flow ratio from 1:4 to 4:1. The morphological and electrical properties of the sputtered films were investigated and a correlation between the surface and electrical properties of the HfO2 films was established with the variation of sputtering parameters. The evolution of monoclinic structure of the hafnium oxide thin films was observed by XRD studies. The surface of the HfO2 films became rough with the increase in grain size at the sputter pressure of 8 × 10−3 mbar and Ar/O2 gas flow ratio of 1:4. The formation of HfO2 bond was seen from FTIR spectra. The oxide charge density has a lower value for the sputter pressure of 8 × 10−3 mbar and Ar/O2 gas flow ratio of 1:4 due to the evolution of larger grains. The interface charge density was found to be minimum at a sputter pressure of 8 × 10−3 mbar.

AB - In this work, hafnium oxide (HfO2) thin films were deposited on p-type silicon substrate by radio frequency magnetron sputtering at various working pressure ranging from 4 × 10−3 to 1 × 10−2 mbar and Ar/O2 flow ratio from 1:4 to 4:1. The morphological and electrical properties of the sputtered films were investigated and a correlation between the surface and electrical properties of the HfO2 films was established with the variation of sputtering parameters. The evolution of monoclinic structure of the hafnium oxide thin films was observed by XRD studies. The surface of the HfO2 films became rough with the increase in grain size at the sputter pressure of 8 × 10−3 mbar and Ar/O2 gas flow ratio of 1:4. The formation of HfO2 bond was seen from FTIR spectra. The oxide charge density has a lower value for the sputter pressure of 8 × 10−3 mbar and Ar/O2 gas flow ratio of 1:4 due to the evolution of larger grains. The interface charge density was found to be minimum at a sputter pressure of 8 × 10−3 mbar.

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