Suppression of temperature-dependent gain variation of conventional EDFA by hybrid connection of antimony-doped silica EDF

Uh Chan Ryu; Youngeun Im; K. Oh; D. J. DiGiovanni; Baishi Wang; A. Hariharan

doi:10.1049/el:20030644

Suppression of temperature-dependent gain variation of conventional EDFA by hybrid connection of antimony-doped silica EDF

Uh Chan Ryu, Youngeun Im, K. Oh, D. J. DiGiovanni, Baishi Wang, A. Hariharan

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A new technique to suppress temperature dependence of EDFA gain is proposed and experimentally demonstrated. A specially designed EDF, the glass host of which is Sb-doped silica, showed an opposite sign of temperature dependent gain coefficients in C-band compared to Al-doped silica EDFs. Concatenation of those two EDFs showed an improved gain variation less than ±0.37 dB for the saturated gain over 15 dB. within -40 to +80°C.

Original language	English
Pages (from-to)	975-977
Number of pages	3
Journal	Electronics Letters
Volume	39
Issue number	13
DOIs	https://doi.org/10.1049/el:20030644
Publication status	Published - 2003 Jun 25

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20030644

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abstract = "A new technique to suppress temperature dependence of EDFA gain is proposed and experimentally demonstrated. A specially designed EDF, the glass host of which is Sb-doped silica, showed an opposite sign of temperature dependent gain coefficients in C-band compared to Al-doped silica EDFs. Concatenation of those two EDFs showed an improved gain variation less than ±0.37 dB for the saturated gain over 15 dB. within -40 to +80°C.",

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AU - Ryu, Uh Chan

AU - Im, Youngeun

AU - Oh, K.

AU - DiGiovanni, D. J.

AU - Wang, Baishi

AU - Hariharan, A.

PY - 2003/6/25

Y1 - 2003/6/25

N2 - A new technique to suppress temperature dependence of EDFA gain is proposed and experimentally demonstrated. A specially designed EDF, the glass host of which is Sb-doped silica, showed an opposite sign of temperature dependent gain coefficients in C-band compared to Al-doped silica EDFs. Concatenation of those two EDFs showed an improved gain variation less than ±0.37 dB for the saturated gain over 15 dB. within -40 to +80°C.

AB - A new technique to suppress temperature dependence of EDFA gain is proposed and experimentally demonstrated. A specially designed EDF, the glass host of which is Sb-doped silica, showed an opposite sign of temperature dependent gain coefficients in C-band compared to Al-doped silica EDFs. Concatenation of those two EDFs showed an improved gain variation less than ±0.37 dB for the saturated gain over 15 dB. within -40 to +80°C.

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JO - Electronics Letters

JF - Electronics Letters

IS - 13

ER -

Suppression of temperature-dependent gain variation of conventional EDFA by hybrid connection of antimony-doped silica EDF

Abstract

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