Abstract
The applicability of the RuO2 incorporated metal emitters for the cathode of the field emission display (FED) was investigated. The RuO2 incorporated Ta film showed an amorphous structure for the as-deposited state and formed a conductive RuO2 phase after annealing without a change in the amorphous structure. This structure could prevent both oxygen indiffusion and oxide formation for the metal matrix, sufficiently, due to the strong bonds of Ta-O or Ta-Ru-O.
Original language | English |
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Pages (from-to) | 972-975 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 18 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2000 Mar |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering